Invention Grant
- Patent Title: Semiconductor device, electronic circuit having the same, and semiconductor device forming method
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Application No.: US16577228Application Date: 2019-09-20
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Publication No.: US11276640B2Publication Date: 2022-03-15
- Inventor: Shinichi Uchida
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2017-076933 20170407
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L49/02 ; H01L23/58
Abstract:
A semiconductor device includes a plurality of first wires formed in a first layer, a plurality of second wires formed to intersect the plurality of first wires in a second layer stacked on the first layer, a plurality of first vias formed at intersections of the plurality of first wires and the plurality of second wires, and an inductor formed in a third layer stacked on the first layer and the second layer.
Public/Granted literature
- US20200013716A1 SEMICONDUCTOR DEVICE, ELECTRONIC CIRCUIT HAVING THE SAME, AND SEMICONDUCTOR DEVICE FORMING METHOD Public/Granted day:2020-01-09
Information query
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