Invention Grant
- Patent Title: Bulk ruthenium chemical mechanical polishing composition
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Application No.: US16299935Application Date: 2019-03-12
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Publication No.: US11279850B2Publication Date: 2022-03-22
- Inventor: David (Tawei) Lin , Bin Hu , Liqing (Richard) Wen , Yannan Liang , Ting-Kai Huang
- Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.
- Applicant Address: US RI North Kingstown
- Assignee: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.
- Current Assignee: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.
- Current Assignee Address: US RI North Kingstown
- Agency: Ohlandt, Greeley, Ruggiero and Perle, LLP
- Main IPC: C09G1/02
- IPC: C09G1/02 ; H01L21/321 ; H01L21/306 ; C23F1/00 ; C23F1/44

Abstract:
The compositions of the present disclosure polish surfaces or substrates that at least partially include ruthenium. The composition includes a synergistic combination of ammonia and oxygenated halogen compound. The composition may further include abrasive and acid(s). A polishing composition for use on ruthenium materials may include ammonia, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; hydrogen periodate, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; silica, present in an amount of 0.01 wt % to 12 wt %, based on the total weight of the composition; and organic sulfonic add, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition, wherein the pH of the composition is between 6 and 8.
Public/Granted literature
- US20190300750A1 BULK RUTHENIUM CHEMICAL MECHANICAL POLISHING COMPOSITION Public/Granted day:2019-10-03
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