- 专利标题： Semiconductor device and method of fabricating the same
-
申请号： US16845615申请日： 2020-04-10
-
公开(公告)号： US11282856B2公开(公告)日： 2022-03-22
- 发明人: Ji-Hoon Choi , Sunggil Kim , Seulye Kim , HongSuk Kim , Phil Ouk Nam , Jaeyoung Ahn
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2017-0055497 20170428
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H01L27/11524 ; H01L27/11556 ; H01L27/1157 ; H01L21/02 ; H01L21/306 ; H01L21/3065 ; H01L27/11573 ; H01L27/11575 ; H01L29/792 ; H01L29/423 ; H01L29/04 ; H01L27/11565 ; H01L29/51
摘要：
A semiconductor device may include a substrate, an electrode structure including electrodes stacked on the substrate, an upper semiconductor pattern penetrating at least a portion of the electrode structure, and a lower semiconductor pattern between the substrate and the upper semiconductor pattern. The upper semiconductor pattern includes a gap-filling portion and a sidewall portion extending from the gap-filling portion in a direction away from the substrate, the lower semiconductor pattern includes a concave top surface, the gap-filling portion fills a region enclosed by the concave top surface, a top surface of the gap-filling portion has a rounded shape that is deformed toward the substrate, and a thickness of the sidewall portion is less than a thickness of the gap-filling portion.
公开/授权文献
- US20200243558A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 公开/授权日：2020-07-30
信息查询
IPC分类:
