Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US17064614Application Date: 2020-10-07
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Publication No.: US11283007B2Publication Date: 2022-03-22
- Inventor: Chih-Wei Kuo , Meng-Jun Wang , Yi-Wei Tseng , Yu-Tsung Lai , Jiunn-Hsiung Liao
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201910419208.X 20190520
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/02 ; H01L43/12

Abstract:
A method for fabricating semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) on a substrate; forming a first inter-metal dielectric (IMD) layer around the MTJ; forming an etch stop layer on the first IMD layer; forming a second IMD layer on the etch stop layer; forming a patterned hard mask on the second IMD layer; performing a first etching process to form a contact hole in the second IMD layer for exposing the etch stop layer; performing a second etching process to remove the patterned hard mask; performing a third etching process to remove the etch stop layer and the first IMD layer for exposing the MTJ; and forming a metal interconnection in the contact hole.
Public/Granted literature
- US20210028352A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2021-01-28
Information query
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