Invention Grant
- Patent Title: Memory device including plurality of latches and system on chip including the same
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Application No.: US17104592Application Date: 2020-11-25
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Publication No.: US11289138B2Publication Date: 2022-03-29
- Inventor: Young-shin Yoo , Min-su Kim , Hyun-chul Hwang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2018-0039997 20180405,KR10-2018-0122034 20181012
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C7/22 ; G06F3/06 ; G11C8/10

Abstract:
A memory device includes a plurality of latches arranged in a plurality of columns including a first column and a second column and in a plurality of rows, a first flip flop configured to output first data, to first latches arranged in the first column, among the plurality of latches, based on a clock, and a second flip flop configured to output second data, to second latches arranged in the second column, among the plurality of latches, based on the clock. The first flip flop is further configured to, in a lock time section in which the first latches and the second latches maintain an output regardless of an input, block output of the first data to the first latches, and the second flip flop is further configured to, in the lock time section, block output of the second data to the second latches.
Public/Granted literature
- US20210158847A1 MEMORY DEVICE INCLUDING PLURALITY OF LATCHES AND SYSTEM ON CHIP INCLUDING THE SAME Public/Granted day:2021-05-27
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