- 专利标题: Damage free metal conductor formation
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申请号: US16901210申请日: 2020-06-15
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公开(公告)号: US11289342B2公开(公告)日: 2022-03-29
- 发明人: He Ren , Jong Mun Kim , Maximillian Clemons , Minrui Yu , Mehul Naik , Chentsau Ying
- 申请人: Applied Materials, Inc.
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Kilpatrick Townsend & Stockton LLP
- 主分类号: H01L21/321
- IPC分类号: H01L21/321 ; H01L21/3213
摘要:
Exemplary methods of etching semiconductor substrates may include flowing a halogen-containing precursor into a processing region of a semiconductor processing chamber. The processing region may house a substrate having a conductive material and an overlying mask material. The conductive material may be characterized by a first surface in contact with the mask material, and the mask material may define an edge region of the conductive material. The methods may include contacting the edge region of the conductive material with the halogen-containing precursor and the oxygen-containing precursor. The methods may include etching in a first etching operation the edge region of the conductive material to a partial depth through the conductive material to produce a footing of conductive material protruding along the edge region of the conductive material. The methods may also include removing the footing of conductive material in a second etching operation.
公开/授权文献
- US20200350178A1 DAMAGE FREE METAL CONDUCTOR FORMATION 公开/授权日:2020-11-05