Invention Grant
- Patent Title: Methods for dicing semiconductor wafers and semiconductor devices made by the methods
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Application No.: US16440063Application Date: 2019-06-13
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Publication No.: US11289378B2Publication Date: 2022-03-29
- Inventor: Kevin Schneider , Alexander Komposch
- Applicant: Cree, Inc.
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: BakerHostetler
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/304 ; H01L21/268 ; H01L33/00 ; H01L29/66
Abstract:
A method for forming semiconductor devices from a semiconductor wafer includes cutting a first surface of a semiconductor wafer to form a first region that extends partially through the semiconductor wafer and the first region has a bottom portion. The method further includes directing a beam of laser light to the semiconductor wafer such that the beam of laser light is focused within the semiconductor wafer between the first surface and the second surface thereof and the beam of laser light further cuts the semiconductor wafer by material ablation to form a second region aligned with the first region. A resulting semiconductor device is disclosed as well.
Information query
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