Invention Grant
- Patent Title: Passive devices over polycrystalline semiconductor fins
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Application No.: US16853137Application Date: 2020-04-20
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Publication No.: US11289474B2Publication Date: 2022-03-29
- Inventor: Man Gu , Wang Zheng , Teng-Yin Lin , Halting Wang , Tung-Hsing Lee
- Applicant: GLOBALFOUNDRIES U.S. Inc.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Thompson Hine LLP
- Agent Anthony Canale
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/11 ; H01L27/06 ; H01L29/78 ; H01L49/02 ; H01L23/66 ; H01P3/06

Abstract:
Structures including a passive device and methods of forming such structures. Multiple fins are positioned on a substrate, and an interconnect structure is positioned over the substrate. The fins contain a polycrystalline semiconductor material, and the interconnect structure includes a passive device that is positioned over the fins. The passive device may be, for example, an inductor or a transmission line.
Public/Granted literature
- US20210327872A1 Passive devices over polycrystalline semiconductor fins Public/Granted day:2021-10-21
Information query
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