Invention Grant
- Patent Title: Semiconductor device and manufacturing method of semiconductor device
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Application No.: US16695385Application Date: 2019-11-26
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Publication No.: US11289475B2Publication Date: 2022-03-29
- Inventor: Shunpei Yamazaki , Tatsuya Onuki , Katsuaki Tochibayashi
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Atsugi
- Agency: Fish & Richardson P.C.
- Priority: JPJP2019-011582 20190125
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/06 ; H01L29/45
Abstract:
A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a transistor and a capacitor. The transistor includes a first conductor and a second insulator over a first insulator; a third insulator over the first conductor and the second insulator; a fourth insulator over the third insulator; a first oxide over the fourth insulator; a second oxide and a third oxide over the first oxide; a second conductor in contact with a top surface of the third insulator, a side surface of the fourth insulator, a side surface of the first oxide, a side surface of the second oxide, and a top surface of the second oxide; a third conductor in contact with the top surface of the third insulator, a side surface of the fourth insulator, a side surface of the first oxide, a side surface of the third oxide, and a top surface of the third oxide; a fourth oxide over the first oxide; a fifth insulator over the fourth oxide; and a fourth conductor over the fifth insulator. The capacitor includes a fifth conductor over the first insulator, the third insulator over the fifth conductor, and the second conductor over the third insulator.
Public/Granted literature
- US20200243514A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2020-07-30
Information query
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