Invention Grant
- Patent Title: Doped titanium nitride materials for DRAM capacitors, and related semiconductor devices, systems, and methods
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Application No.: US15903964Application Date: 2018-02-23
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Publication No.: US11289487B2Publication Date: 2022-03-29
- Inventor: Matthew N. Rocklein , Paul A. Paduano , Sanket S. Kelkar , Christopher W. Petz , Zhe Song , Vassil Antonov , Qian Tao
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/285 ; H01L49/02
Abstract:
A DRAM capacitor comprising a first capacitor electrode configured as a container and comprising a doped titanium nitride material, a capacitor dielectric on the first capacitor electrode, and a second capacitor electrode on the capacitor dielectric. Methods of forming the DRAM capacitor are also disclosed, as are semiconductor devices and systems comprising such DRAM capacitors.
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