公开(公告)号：US20220208767A1

公开(公告)日：2022-06-30

申请号：US17655257

申请日：2022-03-17

Applicant: Micron Technology, Inc.

Inventor： Matthew N. Rocklein ,  Paul A. Paduano ,  Sanket S. Kelkar ,  Christopher W. Petz ,  Zhe Song ,  Vassil Antonov ,  Qian Tao

IPC: H01L27/108 ,  H01L21/285 ,  H01L49/02

Abstract: A DRAM capacitor comprising a first capacitor electrode configured as a container and comprising a doped titanium nitride material, a capacitor dielectric on the first capacitor electrode, and a second capacitor electrode on the capacitor dielectric. Methods of forming the DRAM capacitor are also disclosed, as are semiconductor devices and systems comprising such DRAM capacitors.

公开(公告)号：US09536940B2

公开(公告)日：2017-01-03

申请号：US13622667

申请日：2012-09-19

Applicant: Micron Technology, Inc.

Inventor： Zhe Song ,  Jennifer K. Sigman

IPC: H01L21/00 ,  H01L49/02 ,  H01G4/008 ,  H01L27/108 ,  H01G4/33 ,  H01L21/02

CPC classification number: H01L28/75 ,  H01G4/008 ,  H01G4/33 ,  H01L21/02189 ,  H01L21/02271 ,  H01L21/02362 ,  H01L27/10852

Abstract: A method of forming a semiconductor structure. The method comprises forming a high-k dielectric material, forming a continuous interfacial material over the high-k dielectric material, and forming a conductive material over the continuous interfacial material. Additional methods and semiconductor structures are also disclosed.

Abstract translation: 一种形成半导体结构的方法。 该方法包括形成高k电介质材料，在高k电介质材料上形成连续界面材料，以及在连续界面材料上形成导电材料。 还公开了另外的方法和半导体结构。

公开(公告)号：US11289487B2

公开(公告)日：2022-03-29

申请号：US15903964

申请日：2018-02-23

Applicant: Micron Technology, Inc.

Inventor： Matthew N. Rocklein ,  Paul A. Paduano ,  Sanket S. Kelkar ,  Christopher W. Petz ,  Zhe Song ,  Vassil Antonov ,  Qian Tao

IPC: H01L27/108 ,  H01L21/285 ,  H01L49/02

Abstract: A DRAM capacitor comprising a first capacitor electrode configured as a container and comprising a doped titanium nitride material, a capacitor dielectric on the first capacitor electrode, and a second capacitor electrode on the capacitor dielectric. Methods of forming the DRAM capacitor are also disclosed, as are semiconductor devices and systems comprising such DRAM capacitors.

公开(公告)号：US10573513B2

公开(公告)日：2020-02-25

申请号：US15244629

申请日：2016-08-23

Applicant: Micron Technology, Inc.

Inventor： Zhe Song ,  Tuman E. Allen ,  Cole S. Franklin ,  F. Daniel Gealy

IPC: H01L21/02 ,  H01L45/00 ,  H01L21/033 ,  H01L27/24 ,  H01L27/11582

Abstract: A semiconductor device including stacked structures. The stacked structures include at least two chalcogenide materials or alternating dielectric materials and conductive materials. A liner including alucone is formed on sidewalls of the stacked structures. Methods of forming the semiconductor device are also disclosed.

公开(公告)号：US20190312200A1

公开(公告)日：2019-10-10

申请号：US16446746

申请日：2019-06-20

Applicant: Micron Technology, Inc.

Inventor： Zhe Song ,  Tuman E. Allen ,  Cole S. Franklin ,  F. Daniel Gealy

IPC: H01L45/00 ,  H01L21/02 ,  H01L27/24 ,  H01L21/033 ,  H01L27/1157 ,  H01L27/11582

Abstract: A semiconductor device including stacked structures. The stacked structures include at least two chalcogenide materials or alternating dielectric materials and conductive materials. A liner including alucone is formed on sidewalls of the stacked structures. Methods of forming the semiconductor device are also disclosed.

公开(公告)号：US20160365514A1

公开(公告)日：2016-12-15

申请号：US15244629

申请日：2016-08-23

Applicant: Micron Technology, Inc.

Inventor： Zhe Song ,  Tuman E. Allen ,  Cole S. Franklin ,  F. Daniel Gealy

IPC: H01L45/00 ,  H01L27/115 ,  H01L27/24

Abstract: A semiconductor device including stacked structures. The stacked structures include at least two chalcogenide materials or alternating dielectric materials and conductive materials. A liner including alucone is formed on sidewalls of the stacked structures. Methods of forming the semiconductor device are also disclosed.

公开(公告)号：US09484196B2

公开(公告)日：2016-11-01

申请号：US14189323

申请日：2014-02-25

Applicant: Micron Technology, Inc.

Inventor： Zhe Song ,  Tuman E. Allen ,  Cole S. Franklin ,  Dan Gealy

IPC: H01L21/02 ,  H01L45/00 ,  H01L27/115 ,  H01L21/033 ,  H01L27/24

CPC classification number: H01L45/1691 ,  H01L21/02118 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/02362 ,  H01L21/0337 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/2409 ,  H01L27/2427 ,  H01L27/249 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/141 ,  H01L45/1608 ,  H01L45/1675

Abstract: A semiconductor device including stacked structures. The stacked structures include at least two chalcogenide materials or alternating dielectric materials and conductive materials. A liner including alucone is formed on sidewalls of the stacked structures. Methods of forming the semiconductor device are also disclosed.

Abstract translation: 一种包括堆叠结构的半导体器件。 堆叠结构包括至少两种硫族化物材料或交替介电材料和导电材料。 在层叠结构的侧壁上形成有包含alucone的衬垫。 还公开了形成半导体器件的方法。

公开(公告)号：US11223014B2

公开(公告)日：2022-01-11

申请号：US16446746

申请日：2019-06-20

Applicant: Micron Technology, Inc.

Inventor： Zhe Song ,  Tuman E. Allen ,  Cole S. Franklin ,  Dan Gealy

IPC: H01L45/00 ,  H01L27/11582 ,  H01L21/02 ,  H01L27/24 ,  H01L21/033 ,  H01L27/1157

Abstract: A semiconductor device including stacked structures. The stacked structures include at least two chalcogenide materials or alternating dielectric materials and conductive materials. A liner including alucone is formed on sidewalls of the stacked structures. Methods of forming the semiconductor device are also disclosed.

公开(公告)号：US20190267383A1

公开(公告)日：2019-08-29

申请号：US15903964

申请日：2018-02-23

Applicant: Micron Technology, Inc.

Inventor： Matthew N. Rocklein ,  Paul A. Paduano ,  Sanket S. Kelkar ,  Christopher W. Petz ,  Zhe Song ,  Vassil Antonov ,  Qian Tao

IPC: H01L27/108 ,  H01L49/02 ,  H01L21/285

Abstract: A DRAM capacitor comprising a first capacitor electrode configured as a container and comprising a doped titanium nitride material, a capacitor dielectric on the first capacitor electrode, and a second capacitor electrode on the capacitor dielectric. Methods of forming the DRAM capacitor are also disclosed, as are semiconductor devices and systems comprising such DRAM capacitors.

公开(公告)号：US09499907B2

公开(公告)日：2016-11-22

申请号：US13926289

申请日：2013-06-25

Applicant: Micron Technology, Inc.

Inventor： Zhe Song ,  Chris M. Carlson

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/40 ,  H01G4/08 ,  H01G4/12 ,  H01G4/33 ,  H01L21/02 ,  H01L49/02

CPC classification number: C23C16/45553 ,  C23C16/405 ,  C23C16/45527 ,  H01G4/085 ,  H01G4/12 ,  H01G4/33 ,  H01L21/02159 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228 ,  H01L28/40

Abstract: A method of forming a material over a substrate includes performing at least one iteration of the following temporally separated ALD-type sequence. First, an outermost surface of a substrate is contacted with a first precursor to chemisorb a first species onto the outermost surface from the first precursor. Second, the outermost surface is contacted with a second precursor to chemisorb a second species different from the first species onto the outermost surface from the second precursor. The first and second precursors include ligands and different central atoms. At least one of the first and second precursors includes at least two different composition ligands. The two different composition ligands are polyatomic or a lone halogen. Third, the chemisorbed first species and the chemisorbed second species are contacted with a reactant which reacts with the first species and with the second species to form a reaction product new outermost surface of the substrate.