- 专利标题： Thermal diode switch
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申请号： US16773921申请日： 2020-01-27
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公开(公告)号： US11289590B1公开(公告)日： 2022-03-29
- 发明人: Faraz Najafi , Qiaodan Jin Stone , Andrea Bahgat Shehata
- 申请人： PsiQuantum Corp.
- 申请人地址： US CA Palo Alto
- 专利权人： PsiQuantum Corp.
- 当前专利权人： PsiQuantum Corp.
- 当前专利权人地址： US CA Palo Alto
- 代理机构： Morgan, Lewis & Bockius LLP
- 主分类号： H01L29/868
- IPC分类号： H01L29/868 ; H01L29/66 ; H01L29/861 ; H01L23/34 ; H01L27/18 ; H01L31/09 ; H01L39/16 ; H01L31/107
摘要：
The various embodiments described herein include methods, devices, and systems for fabricating and operating diodes. In one aspect, an electrical circuit includes: (1) a diode component having a particular energy band gap; (2) an electrical source electrically coupled to the diode component and configured to bias the diode component in a particular state; and (3) a heating component thermally coupled to a junction of the diode component and configured to selectively supply heat corresponding to the particular energy band gap.
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