Invention Grant
- Patent Title: Programming memory cells where higher levels are programmed prior to lower levels
-
Application No.: US17074690Application Date: 2020-10-20
-
Publication No.: US11295809B2Publication Date: 2022-04-05
- Inventor: Changhyun Lee , Akira Goda , William C. Filipiak
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C11/56
- IPC: G11C11/56 ; G11C16/10 ; G11C16/34 ; G11C16/04
Abstract:
One embodiment of a method for programming multiple-level memory cells includes programming lower page data to memory cells in a first pass of a multiple-pass programming operation. The method includes programming higher page data to the memory cells in a second pass of the multiple-pass programming operation such that higher page data subject to the programmed lower page data is programmed prior to higher page data subject to erase data.
Public/Granted literature
- US20210035630A1 PROGRAMMING MEMORY CELLS OF MEMORY DEVICES Public/Granted day:2021-02-04
Information query
