To suppress deterioration of image quality. A solid-state imaging device (1) according to an embodiment includes a first vertical signal line (VSL0k) and a second vertical signal line (VSL1k), a current mirror circuit (141) connected to the first and the second vertical signal lines, a first unit pixel (11i) connected to the first vertical signal line, a second unit pixel (11i+1) connected to the second vertical signal line, a first unit cell (11D0) connected to the first vertical signal line, a second unit cell (11D1) connected to the second vertical signal line, a current supply line (VCOM) connected to the first and the second unit pixels and the first and the second unit cells, and a constant current circuit (142) connected to the current supply line. A first amplification transistor of the first unit pixel, a second amplification transistor of the second unit pixel, the current mirror circuit, and the constant current circuit constitute a first differential amplifier circuit, and a third amplification transistor of the first unit cell, a fourth amplification transistor of the second unit cell, the current mirror circuit, and the constant current circuit constitute a second differential amplifier circuit.