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1.发明公开公开(公告)号：US20240276120A1
公开(公告)日：2024-08-15
申请号：US18561225
申请日：2021-12-28
发明人： Mamoru Sato , Masaki Sakakibara , Toshiaki Ono
IPC分类号： H04N25/77 , H04N25/627
CPC分类号： H04N25/77 , H04N25/627
摘要： To improve the image quality in a solid-state imaging element that performs CDS processing.
The solid-state imaging element includes an amplitude detection unit and a black spot prevention unit. The amplitude detection unit detects whether an output voltage that is a voltage of a vertical signal line for transmitting either a reset level at which a pixel is initialized or a signal level corresponding to an amount of light exceeds a predetermined determination threshold. The black spot prevention unit controls, when the output voltage exceeds the determination threshold, a first digital signal obtained by converting the reset level and a second digital signal obtained by converting the signal level to different values.-
公开(公告)号：US20230041457A1
公开(公告)日：2023-02-09
申请号：US17971981
申请日：2022-10-24
发明人： Mamoru Sato , Akihiko Kato , Yusuke Oike
IPC分类号： H04N5/365 , H04N5/3745 , H04N5/378 , H04N5/369 , H04N5/361
摘要： To improve the image quality of image data in a solid-state imaging device that reads a signal according to a potential difference between respective floating diffusion regions of a pair of pixels.
A pixel unit is provided with a plurality of rows each including a plurality of pixels. A readout row selection unit selects any of the plurality of rows as a readout row every time a predetermined period elapses, and causes each of the plurality of pixels in the readout row to generate a signal potential according to a received light amount. A reference row selection unit selects a row different from a previous row from among the plurality of rows as a current reference row every time the predetermined period elapses, and causes each of the plurality of pixels in the reference row to generate a predetermined reference potential. A readout circuit unit reads a voltage signal according to a difference between the signal potential and the reference potential.-
公开(公告)号：US11503240B2
公开(公告)日：2022-11-15
申请号：US16976372
申请日：2019-01-10
发明人： Mamoru Sato
IPC分类号： H04N5/378 , H01L27/146 , H04N5/3745 , H04N5/343 , H01L27/148
摘要： Provided is a solid-state image pickup element that amplifies the difference between respective signals of a pair of pixels and enables a reduction in the number of wiring lines.
The solid-state image pickup element includes an electric-charge accumulation unit, a reference reset transistor, and a readout reset transistor. The electric-charge accumulation unit accumulates electric charge transferred from a photoelectric conversion unit and generates signal voltage corresponding to the amount of the electric charge. The reference reset transistor supplies predetermined reset voltage to the electric-charge accumulation unit in a case of generating predetermined reference voltage. The readout reset transistor supplies voltage different from the reset voltage to the electric-charge accumulation unit in a case of reading out the signal voltage.-
公开(公告)号：US11451725B2
公开(公告)日：2022-09-20
申请号：US17051675
申请日：2019-03-18
发明人： Mamoru Sato
IPC分类号： H04N5/3745 , H04N5/355 , H04N5/378
摘要： To widen a dynamic range without reducing a frame rate in a solid-state imaging element provided with a differential amplifier circuit.
The solid-state imaging element includes a reading circuit and a processing unit. The reading circuit performs processing of outputting a differentially amplified signal obtained by amplifying a difference between generated voltages of a pair of pixels and processing of outputting a pixel signal of the generated voltage of at least one of the pair of pixels each time the pair of pixels are exposed. The processing unit performs synthesis processing of synthesizing the output differentially amplified signal and the output pixel signal.-
公开(公告)号：US20210051285A1
公开(公告)日：2021-02-18
申请号：US16976372
申请日：2019-01-10
发明人： Mamoru Sato
IPC分类号： H04N5/378 , H04N5/3745 , H01L27/146 , H01L27/148
摘要： Provided is a solid-state image pickup element that amplifies the difference between respective signals of a pair of pixels and enables a reduction in the number of wiring lines.
The solid-state image pickup element includes an electric-charge accumulation unit, a reference reset transistor, and a readout reset transistor. The electric-charge accumulation unit accumulates electric charge transferred from a photoelectric conversion unit and generates signal voltage corresponding to the amount of the electric charge. The reference reset transistor supplies predetermined reset voltage to the electric-charge accumulation unit in a case of generating predetermined reference voltage. The readout reset transistor supplies voltage different from the reset voltage to the electric-charge accumulation unit in a case of reading out the signal voltage.-
公开(公告)号：US20230031389A1
公开(公告)日：2023-02-02
申请号：US17958702
申请日：2022-10-03
发明人： Yusuke Oike , Mamoru Sato , Yukio Tagawa
IPC分类号： H04N5/363 , H04N5/3745 , H04N5/378
摘要： There is provided an imaging device, comprising differential amplifier circuitry comprising a first amplification transistor and a second amplification transistor; and a plurality of pixels including a first pixel and a second pixel, wherein the first pixel includes a first photoelectric converter, a first reset transistor, and the first amplification transistor, and wherein the second pixel includes a second photoelectric converter, a second reset transistor, and the second amplification transistor, wherein the first reset transistor is coupled to a first reset voltage, and wherein the second reset transistor is coupled to a second reset voltage different than the first reset voltage.
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公开(公告)号：US11153518B2
公开(公告)日：2021-10-19
申请号：US16632947
申请日：2018-07-19
发明人： Mamoru Sato
IPC分类号： H04N5/355 , H04N5/361 , H04N5/3745 , H04N5/378
摘要： The present technology relates to a solid-state imaging element and an imaging apparatus that provides an ample dynamic range. The solid-state imaging element includes a pixel array section and a readout load section. The pixel array section has a readout pixel and a reference pixel. A pixel signal proportional to an amount of incident light is read out from the readout pixel. The reference pixel has characteristics similar to those of the readout pixel. The readout load section forms a differential amplification circuit together with the readout pixel and the reference pixel and inputs, to the reference pixel, a pseudo-dark current signal corresponding to a dark current signal that occurs in the readout pixel, thus canceling the dark current signal. The present technology is applicable to a CMOS image sensor.
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公开(公告)号：US20210168317A1
公开(公告)日：2021-06-03
申请号：US17265899
申请日：2019-08-16
发明人： Mamoru Sato , Akihiko Kato
IPC分类号： H04N5/378 , H04N5/3745 , H04N5/355 , H01L27/146
摘要： A solid-state imaging device is disclosed. In one example, a solid-state imaging device includes a current mirror circuit connected to first and second vertical signal lines, first and second unit pixels connected to the first or the second vertical signal line, a current supply line connected to the first and the second unit pixels, and a constant current circuit connected to the current supply line. The unit pixels each include a photoelectric conversion element, a transfer transistor that transfers an electric charge generated in the photoelectric conversion element, first and second charge accumulation units that accumulate the transferred electric charge, a switching transistor configured to control accumulation of the electric charge by the second charge accumulation unit, and an amplification transistor that causes a voltage corresponding to electric charges accumulated the first and/or the second charge accumulation units to appear in the first or the second vertical signal line.
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公开(公告)号：US20210092311A1
公开(公告)日：2021-03-25
申请号：US17051675
申请日：2019-03-18
发明人： Mamoru Sato
IPC分类号： H04N5/355 , H04N5/378 , H04N5/3745
摘要： To widen a dynamic range without reducing a frame rate in a solid-state imaging element provided with a differential amplifier circuit.
The solid-state imaging element includes a reading circuit and a processing unit. The reading circuit performs processing of outputting a differentially amplified signal obtained by amplifying a difference between generated voltages of a pair of pixels and processing of outputting a pixel signal of the generated voltage of at least one of the pair of pixels each time the pair of pixels are exposed. The processing unit performs synthesis processing of synthesizing the output differentially amplified signal and the output pixel signal.-
公开(公告)号：US12052522B2
公开(公告)日：2024-07-30
申请号：US17417208
申请日：2020-02-28
发明人： Mamoru Sato , Akihiko Kato , Eriko Kato
IPC分类号： H04N25/709 , H01L27/146 , H04N25/627 , H04N25/75
CPC分类号： H04N25/709 , H01L27/14603 , H01L27/14612 , H01L27/14643 , H04N25/75
摘要： A light detecting device includes: one or more switch transistors, a first pixel including a first floating diffusion region coupled to a first photoelectric converter through a first transfer transistor, and a first amplification transistor coupled to the first floating diffusion region, a second pixel including a second floating diffusion region coupled to a second photoelectric converter through a second transfer transistor, and a second amplification transistor coupled to the second floating diffusion region, and a third pixel including a third floating diffusion region coupled to a third photoelectric converter through a third transfer transistor, and a third amplification transistor coupled to the third floating diffusion region. A pixel signal is differentially amplified by the first and third amplification transistors. The first and second floating diffusion regions are selectively connected to each other via one of the one or more switch transistors.
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