Invention Grant
- Patent Title: Configurable memory storage system
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Application No.: US17201931Application Date: 2021-03-15
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Publication No.: US11301148B2Publication Date: 2022-04-12
- Inventor: Yu-Hao Hsu , Cheng Hung Lee , Chen-Lin Yang , Chiting Cheng , Fu-An Wu , Hung-Jen Liao , Jung-Ping Yang , Jonathan Tsung-Yung Chang , Wei Min Chan , Yen-Huei Chen , Yangsyu Lin , Chien-Chen Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G06F3/06 ; G11C11/4074 ; G11C16/30 ; G11C16/12 ; H04B10/03 ; H04B10/27 ; H04J14/02

Abstract:
Various embodiments for configurable memory storage systems are disclosed. The configurable memory storages selectively choose an operational voltage signal from among multiple operational voltage signals to dynamically control various operational parameters. For example, the configurable memory storages selectively choose a maximum operational voltage signal from among the multiple operational voltage signals to maximize read/write speed. As another example, the configurable memory storages selectively choose a minimum operational voltage signal from among the multiple operational voltage signals to minimize power consumption.
Public/Granted literature
- US20210200452A1 CONFIGURABLE MEMORY STORAGE SYSTEM Public/Granted day:2021-07-01
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