Invention Grant
- Patent Title: Memory device including processing circuit, and electronic device including system on chip and memory device
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Application No.: US16934497Application Date: 2020-07-21
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Publication No.: US11301399B2Publication Date: 2022-04-12
- Inventor: Sang-Hyuk Kwon , Nam Sung Kim , Kyomin Sohn , Jaeyoun Youn
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2019-0150924 20191122
- Main IPC: G06F13/38
- IPC: G06F13/38 ; G06F13/16 ; H01L25/065 ; G11C8/10 ; G11C7/10

Abstract:
A memory device includes a buffer die configured to receive a first broadcast command and a second broadcast command from an external device; and a plurality of core dies stacked on the buffer die. The plurality of core dies include: a first core die including a first processing circuit, a first memory cell array, a first command decoder configured to decode the first broadcast command, and a first data input/output circuit configured to output data of the first memory cell array to a common data input/output bus under control of the first command decoder; and a second core die including a second processing circuit, a second memory cell array, a second command decoder configured to decode the second broadcast command, and a second data input/output circuit configured to receive the data of the first memory cell array through the common data input/output bus under control of the second command decoder.
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