- 专利标题： Semiconductor device manufacturing method
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申请号： US16931678申请日： 2020-07-17
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公开(公告)号： US11302538B2公开(公告)日： 2022-04-12
- 发明人: Yosuke Nakata
- 申请人： Mitsubishi Electric Corporation
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Studebaker & Brackett PC
- 优先权： JPJP2019-193952 20191025
- 主分类号： H01L23/58
- IPC分类号： H01L23/58 ; H01L21/44 ; H01L21/48 ; H01L21/50 ; H01L21/56 ; H01L21/3105 ; H01L21/304 ; H01L21/683 ; H01L21/78
摘要：
A semiconductor device manufacturing method includes processes of: applying a protective film precursor solution over an end of each of a plurality of semiconductor element structures and a side surface and a bottom surface of a groove; roughly drying a solvent in the protective film precursor solution to form a protective film; and performing full-curing to evaporate a solvent in the protective film after a process of cutting between the plurality of semiconductor element structures or a process of peeling a plurality of semiconductor elements from a dicing tape.
公开/授权文献
- US20210125838A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 公开/授权日：2021-04-29
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