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    Semiconductor device
    1.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10825751B2

    公开(公告)日：2020-11-03

    申请号：US16080029

    申请日：2016-04-01

    申请人： Mitsubishi Electric Corporation

    发明人： Yosuke Nakata ,  Tatsuya Kawase ,  Mikio Ishihara ,  Noboru Miyamoto

    IPC分类号： H01L23/10 ,  H01L23/373 ,  H01L25/18 ,  H01L25/07 ,  H01L23/433 ,  H01L23/367 ,  H01L23/00

    摘要： In semiconductor device, a substrate unit includes an insulating substrate, a first conductor substrate and a second conductor substrate which are disposed on one main surface of the insulating substrate and spaced apart from each other, and a third conductor substrate which is disposed on the other main surface opposite to the one main surface of the insulating substrate. A terminal is connected to a surface of a semiconductor element opposite to the first conductor substrate. The terminal extends from a region above the semiconductor element to a region above the second conductor substrate while being connected to the second conductor substrate. At least a part of the terminal, the substrate unit and the semiconductor element is sealed by a resin. The third conductor substrate is exposed from the resin.

    SEMICONDUCTOR APPARATUS, POWER MODULE, AND MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS
    4.
    发明申请
    SEMICONDUCTOR APPARATUS, POWER MODULE, AND MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS 有权

    公开(公告)号：US20220238476A1

    公开(公告)日：2022-07-28

    申请号：US17401863

    申请日：2021-08-13

    申请人： Mitsubishi Electric Corporation

    发明人： Yosuke Nakata ,  Yuji Sato ,  Yoshinori Yokoyama

    IPC分类号： H01L23/00 ,  H01L25/065 ,  H01L23/495 ,  H01L23/31 ,  H01L25/00 ,  H01L21/56

    摘要： A semiconductor apparatus includes: a first conductor plate; a second conductor plate separated from the first conductor plate; a plurality of semiconductor devices having back surface electrodes connected to the first conductor plate; a relay substrate mounted on the second conductor plate and including a plurality of first relay pads and a second relay pad connected to the plurality of first relay pads; a plurality of metal wires respectively connecting control electrodes of the plurality of semiconductor devices to the plurality of first relay pads; a first conductor block connected to front surface electrodes of the plurality of semiconductor devices; a second conductor block connected to the second relay pad; and a sealing material sealing the first and second conductor plates, the plurality of semiconductor devices, the relay substrate, the metal wire, and the first and second conductor blocks, the sealing material includes a first principal surface and a second principal surface opposed to each other, the first conductor plate is exposed from the first principal surface, the second conductor plate is not exposed from the first principal surface, and the first and second conductor blocks are exposed from the second principal surface.

    Semiconductor device, inverter device, and vehicle
    5.
    发明授权
    Semiconductor device, inverter device, and vehicle 有权

    公开(公告)号：US10388589B2

    公开(公告)日：2019-08-20

    申请号：US15742536

    申请日：2015-11-25

    申请人： Mitsubishi Electric Corporation

    发明人： Tatsuya Kawase ,  Mikio Ishihara ,  Noboru Miyamoto ,  Yosuke Nakata ,  Yuji Imoto

    IPC分类号： H01L23/473 ,  H01L25/07 ,  H01L25/18 ,  H05K7/20

    摘要： The object is to provide a technology capable of enhancing a cooling performance of a semiconductor device. The semiconductor device includes a fin portion including a plurality of projecting portions that are connected to a lower surface of a heat-transfer base plate, a cooling member covering the fin portion and being connected to an inlet through which coolant to flow toward the fin portion flows in and an outlet through which coolant flowing from the fin portion flows out, and a header being a water storage chamber that is provided between the inlet and the fin portion and is partitioned from the fin portion so as to be capable of allowing coolant to flow through from the inlet to the fin portion.

    Manufacturing method of semiconductor device
    8.
    发明授权
    Manufacturing method of semiconductor device 有权

    公开(公告)号：US11887933B2

    公开(公告)日：2024-01-30

    申请号：US17501598

    申请日：2021-10-14

    申请人： Mitsubishi Electric Corporation

    发明人： Yosuke Nakata ,  Yuji Sato

    IPC分类号： H01L23/538 ,  H01L23/00 ,  H01L23/10

    CPC分类号： H01L23/5385 ,  H01L23/10 ,  H01L23/5386 ,  H01L24/04 ,  H01L24/96

    摘要： A semiconductor chip including a main electrode and a control electrode is bonded to a substrate. A wiring chip including a first electrode, a second electrode and a wiring is bonded to the substrate. A main electrode member is bonded to the main electrode. A control electrode member is bonded to the second electrode. The control electrode is bonded to the first electrode with a connection member. The semiconductor chip, the substrate, the wiring chip, the main electrode member, the control electrode member and the connection member are putted into a mold and are sealed with sealing material by injecting the sealing material into the mold in a state that distal end surfaces of the main electrode member and the control electrode member are pressed against a buffer material provided between the main electrode member/the control electrode member and the mold. The sealing material is not ground.