Invention Grant
- Patent Title: Semiconductor photodetector assembly
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Application No.: US16710801Application Date: 2019-12-11
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Publication No.: US11302835B2Publication Date: 2022-04-12
- Inventor: Mohamed Azize
- Applicant: Analog Devices, Inc.
- Applicant Address: US MA Norwood
- Assignee: Analog Devices, Inc.
- Current Assignee: Analog Devices, Inc.
- Current Assignee Address: US MA Norwood
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L31/0256 ; H01L31/0304 ; H01L31/0352 ; H01L31/0224 ; H01L31/0232 ; H01L31/112 ; H01L31/18 ; H01L31/109
Abstract:
Techniques to use energy band gap engineering (or band offset engineering) to produce a photodetector semiconductor assembly that can be tuned to absorb light in one or more wavelengths. For example, the assembly can be tuned to receive infrared (IR) and/or ultraviolet (UV) light. The photodetector assembly can operate as a photodiode, a phototransistor, or can include both a photodiode and a phototransistor.
Public/Granted literature
- US20200220036A1 SEMICONDUCTOR PHOTODETECTOR ASSEMBLY Public/Granted day:2020-07-09
Information query
IPC分类:
