公开(公告)号：US11049900B2

公开(公告)日：2021-06-29

申请号：US16532189

申请日：2019-08-05

Applicant: Analog Devices, Inc.

Inventor： Mohamed Azize ,  Alain Valentin Guery ,  Mario Joseph Freni

IPC: H01L27/15 ,  H01L33/50 ,  H01S5/026 ,  H01S5/06 ,  H01S5/187 ,  H01L33/46

Abstract: Low-cost and high-efficiency monolithically integrated nanoscale-based light emitter techniques can be used in, for example, electronic display applications and spectroscopy applications using spectrometers. Using various techniques, a light emitter can include quantum dots (QDs) and can be arranged to emit light in mono-band (e.g., one wavelength) or in broad-band (e.g., more than one wavelength) such as in the visible to mid-infrared range, e.g., from about 365 nm to about 10 μm. The light emitter nanotechnology can be based on a nanoscale wafer manufacturing for displays and spectroscopy applications.

公开(公告)号：US20250018399A1

公开(公告)日：2025-01-16

申请号：US18770325

申请日：2024-07-11

Applicant: Analog Devices, Inc.

Inventor： Jay Maxson Pittman ,  Hari Chauhan ,  Mohamed Azize ,  Kyungyong Choi

IPC: B01L7/00 ,  G01N21/25

Abstract: The present disclosure provides a nucleic acid amplification test molecular diagnostic device. In this respect, a system can include a reusable base component having a heater and a disposable component including a reaction chamber and a sample receiving portion that is fluidly coupled to the reaction chamber. The base component can heat a sample fluid within the reaction chamber. Light can be directed to the reaction chamber, and light can be transmitted light from the reaction chamber to an optical detector. Data may be transmitted to an external device. Certain devices may be used for at home or point-of-care testing, and some devices may be used for laboratory testing.

公开(公告)号：US20200075664A1

公开(公告)日：2020-03-05

申请号：US16532189

申请日：2019-08-05

Applicant: Analog Devices, Inc.

Inventor： Mohamed Azize ,  Alain Valentin Guery ,  Mario Joseph Freni

IPC: H01L27/15 ,  H01L33/50 ,  H01L33/46 ,  H01S5/06 ,  H01S5/187 ,  H01S5/026

Abstract: Low-cost and high-efficiency monolithically integrated nanoscale-based light emitter techniques can be used in, for example, electronic display applications and spectroscopy applications using spectrometers. Using various techniques, a light emitter can include quantum dots (QDs) and can be arranged to emit light in mono-band (e.g., one wavelength) or in broad-band (e.g., more than one wavelength) such as in the visible to mid-infrared range, e.g., from about 365 nm to about 10 μm. The light emitter nanotechnology can be based on a nanoscale wafer manufacturing for displays and spectroscopy applications.

公开(公告)号：US12031939B2

公开(公告)日：2024-07-09

申请号：US17827619

申请日：2022-05-27

Applicant: Analog Devices, Inc.

Inventor： Mohamed Azize ,  Shekhar Bakshi

IPC: G01N27/414 ,  G01N27/30 ,  H01L29/16 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66

CPC classification number: G01N27/4145 ,  G01N27/301 ,  G01N27/414 ,  H01L29/42316 ,  H01L29/66045 ,  H01L29/66075 ,  H01L29/1606 ,  H01L29/4908

Abstract: Provided are methods of manufacturing comprising providing a FET base structure, the FET base structure comprising a substrate, a drain and a source; and providing a channel layer on the FET base structure; and providing a first layer on the FET base structure. The first layer comprises a one-dimensional or two-dimensional material and is arranged on an upper surface of the channel layer so as to form a sensing surface of the FET. The step of providing the channel layer comprises forming the channel layer and subsequently transferring the channel layer onto the FET base structure. Alternatively or additionally, the step of providing the first layer on the FET base structure comprises forming the first layer and subsequently transferring the first layer onto the FET base structure.

公开(公告)号：US11302835B2

公开(公告)日：2022-04-12

申请号：US16710801

申请日：2019-12-11

Applicant: Analog Devices, Inc.

Inventor： Mohamed Azize

IPC: H01L29/15 ,  H01L31/0256 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/112 ,  H01L31/18 ,  H01L31/109

Abstract: Techniques to use energy band gap engineering (or band offset engineering) to produce a photodetector semiconductor assembly that can be tuned to absorb light in one or more wavelengths. For example, the assembly can be tuned to receive infrared (IR) and/or ultraviolet (UV) light. The photodetector assembly can operate as a photodiode, a phototransistor, or can include both a photodiode and a phototransistor.

公开(公告)号：US11309450B2

公开(公告)日：2022-04-19

申请号：US16579428

申请日：2019-09-23

Applicant: Analog Devices, Inc.

Inventor： Mohamed Azize

IPC: H01L31/101 ,  H01L31/112 ,  H01L31/0304 ,  H01L31/18 ,  H01L31/109 ,  H01L29/778

Abstract: An inexpensive IR photodetector assembly that can provide high performance in SWIR applications, such as LIDAR. The photodetector assembly can operate as a photodiode, a phototransistor, or can include both a photodiode and a phototransistor. The hybrid photodetector can be composed of one or more absorber layer materials from a first semiconductor family, e.g., p-type InGaAs, laying on one or more wide-band gap semiconductor transducer layer materials from a second semiconductor family, e.g., aluminum gallium nitride (AlGaN) and gallium nitride (GaN), or AlGaN/n-GaN. As such, the absorber layer material and the wide band gap materials can be from two different semiconductor families, making the IR photodetector a hybrid of semiconductor families. After shining IR light onto the absorber layer material, the photo-generated electron-hole pairs can be collected as photocurrent in the photo-voltaic mode.

公开(公告)号：US20200220036A1

公开(公告)日：2020-07-09

申请号：US16710801

申请日：2019-12-11

Applicant: Analog Devices, Inc

Inventor： Mohamed Azize

IPC: H01L31/0304 ,  H01L31/0352 ,  H01L31/0224 ,  H01L31/109 ,  H01L31/112 ,  H01L31/18 ,  H01L31/0232

Abstract: Techniques to use energy band gap engineering (or band offset engineering) to produce a photodetector semiconductor assembly that can be tuned to absorb light in one or more wavelengths. For example, the assembly can be tuned to receive infrared (IR) and/or ultraviolet (UV) light. The photodetector assembly can operate as a photodiode, a phototransistor, or can include both a photodiode and a phototransistor.