- 专利标题: Anti-stiction process for MEMS device
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申请号: US16717862申请日: 2019-12-17
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公开(公告)号: US11305980B2公开(公告)日: 2022-04-19
- 发明人: Jui-Chun Weng , Lavanya Sanagavarapu , Ching-Hsiang Hu , Wei-Ding Wu , Shyh-Wei Cheng , Ji-Hong Chiang , Hsin-Yu Chen , Hsi-Cheng Hsu
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Duane Morris LLP
- 主分类号: B81B3/00
- IPC分类号: B81B3/00 ; H01J37/34 ; B81C1/00 ; H01L21/02
摘要:
A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.
公开/授权文献
- US3270497A Anti-icing additives for hydrocarbon fuels 公开/授权日:1966-09-06
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