公开(公告)号：US11861928B2

公开(公告)日：2024-01-02

申请号：US17993319

申请日：2022-11-23

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： You-Cheng Jhang ,  Han-Zong Pan ,  Wei-Ding Wu ,  Jiu-Chun Weng ,  Hsin-Yu Chen ,  Cheng-San Chou ,  Chin-Min Lin

IPC分类号： G06V40/13 ,  G02B27/30 ,  G06F3/041 ,  G06F21/32 ,  H01L27/146

CPC分类号： G06V40/13 ,  G02B27/30 ,  G06F3/0412 ,  G06F21/32 ,  H01L27/14625

摘要： Optical sensors and their making methods are described herein. In some embodiments, a described sensing apparatus includes: an image sensor; a collimator above the image sensor, wherein the collimator includes an array of apertures; and an optical filtering layer above the collimator, wherein the optical filtering layer is configured to filter a portion of light to be transmitted into the array of apertures.

公开(公告)号：US11756883B2

公开(公告)日：2023-09-12

申请号：US16927249

申请日：2020-07-13

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yung-Chi Lin ,  Hsin-Yu Chen ,  Lin-Chih Huang ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou

IPC分类号： H01L23/528 ,  H01L27/088 ,  H01L23/31 ,  H01L23/48 ,  H01L23/532 ,  H01L23/00 ,  H01L21/768 ,  H01L23/525

CPC分类号： H01L23/528 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/481 ,  H01L23/53238 ,  H01L24/13 ,  H01L27/088 ,  H01L23/525 ,  H01L23/53223 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/53271 ,  H01L24/05 ,  H01L2224/0401 ,  H01L2224/05024 ,  H01L2224/0557 ,  H01L2224/05552 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13111 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2224/05572 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/05552 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/12042 ,  H01L2924/00

摘要： A method comprises forming a trench extending through an interlayer dielectric layer over a substrate and partially through the substrate, depositing a photoresist layer over the trench, wherein the photoresist layer partially fills the trench, patterning the photoresist layer to remove the photoresist layer in the trench and form a metal line trench over the interlayer dielectric layer, filling the trench and the metal line trench with a conductive material to form a via and a metal line, wherein an upper portion of the trench is free of the conductive material and depositing a dielectric material over the substrate, wherein the dielectric material is in the upper portion of the trench.

公开(公告)号：US11728296B2

公开(公告)日：2023-08-15

申请号：US17073533

申请日：2020-10-19

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsiao Yun Lo ,  Lin-Chih Huang ,  Tasi-Jung Wu ,  Hsin-Yu Chen ,  Yung-Chi Lin ,  Ku-Feng Yang ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou

IPC分类号： H01L23/00 ,  H01L23/48

CPC分类号： H01L24/05 ,  H01L23/481 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/0391 ,  H01L2224/03462 ,  H01L2224/03602 ,  H01L2224/03614 ,  H01L2224/03616 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05012 ,  H01L2224/05017 ,  H01L2224/05025 ,  H01L2224/05026 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05565 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05684 ,  H01L2224/1145 ,  H01L2224/11334 ,  H01L2224/11462 ,  H01L2224/131 ,  H01L2224/13023 ,  H01L2224/13026 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2224/05187 ,  H01L2924/04941 ,  H01L2224/05187 ,  H01L2924/04953 ,  H01L2224/0345 ,  H01L2924/00014 ,  H01L2224/05181 ,  H01L2924/00014 ,  H01L2224/05124 ,  H01L2924/00014 ,  H01L2224/05184 ,  H01L2924/00014 ,  H01L2224/05139 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/013 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/05684 ,  H01L2924/00014 ,  H01L2224/05639 ,  H01L2924/00014 ,  H01L2224/03602 ,  H01L2924/00014 ,  H01L2224/03614 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2224/13147 ,  H01L2924/00014 ,  H01L2224/1145 ,  H01L2924/00014 ,  H01L2224/11462 ,  H01L2924/00014 ,  H01L2224/131 ,  H01L2924/014

摘要： A device includes a first side interconnect structure over a first side of a substrate, wherein active circuits are in the substrate and adjacent to the first side of the substrate, a dielectric layer over a second side of the substrate, a pad embedded in the dielectric layer, the pad comprising an upper portion and a bottom portion formed of two different materials and a passivation layer over the dielectric layer.

公开(公告)号：US12092839B2

公开(公告)日：2024-09-17

申请号：US18222344

申请日：2023-07-14

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsin-Yu Chen ,  Chun-Peng Li ,  Chia-Chun Hung ,  Ching-Hsiang Hu ,  Wei-Ding Wu ,  Jui-Chun Weng ,  Ji-Hong Chiang ,  Yen Chiang Liu ,  Jiun-Jie Chiou ,  Li-Yang Tu ,  Jia-Syuan Li ,  You-Cheng Jhang ,  Shin-Hua Chen ,  Lavanya Sanagavarapu ,  Han-Zong Pan ,  Hsi-Cheng Hsu

IPC分类号： G02B27/30 ,  H01L27/146 ,  H01L31/0232

CPC分类号： G02B27/30 ,  H01L27/14625 ,  H01L31/02325

摘要： Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm−3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.

公开(公告)号：US11782284B2

公开(公告)日：2023-10-10

申请号：US17883592

申请日：2022-08-08

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsin-Yu Chen ,  Yen-Chiang Liu ,  Jiun-Jie Chiou ,  Jia-Syuan Li ,  You-Cheng Jhang ,  Shin-Hua Chen ,  Lavanya Sanagavarapu ,  Han-Zong Pan ,  Chun-Peng Li ,  Chia-Chun Hung ,  Ching-Hsiang Hu ,  Wei-Ding Wu ,  Jui-Chun Weng ,  Ji-Hong Chiang ,  Hsi-Cheng Hsu

IPC分类号： G02B27/30 ,  G02B5/20 ,  H01L27/14 ,  G02B26/00 ,  H01L27/146 ,  H01L31/0216 ,  G06V40/13

CPC分类号： G02B27/30 ,  G02B5/20 ,  G02B26/007 ,  G06V40/1312 ,  H01L27/1462 ,  H01L27/14625 ,  H01L31/02162 ,  B32B2551/00 ,  G06V40/1318

摘要： Disclosed is a cost-effective method to fabricate a multifunctional collimator structure for contact image sensors to filter ambient infrared light to reduce noises. In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; a plurality of via holes; and a conductive layer, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction.

公开(公告)号：US11514707B2

公开(公告)日：2022-11-29

申请号：US16869314

申请日：2020-05-07

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： You-Cheng Jhang ,  Han-Zong Pan ,  Wei-Ding Wu ,  Jui-Chun Weng ,  Hsin-Yu Chen ,  Cheng-San Chou ,  Chin-Min Lin

IPC分类号： G06V40/13 ,  G06F3/041 ,  G02B27/30 ,  H01L27/146 ,  G06F21/32

摘要： Optical sensors and their making methods are described herein. In some embodiments, a described sensing apparatus includes: an image sensor; a collimator above the image sensor, wherein the collimator includes an array of apertures; and an optical filtering layer above the collimator, wherein the optical filtering layer is configured to filter a portion of light to be transmitted into the array of apertures.

公开(公告)号：US11448891B2

公开(公告)日：2022-09-20

申请号：US16655763

申请日：2019-10-17

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsin-Yu Chen ,  Chun-Peng Li ,  Chia-Chun Hung ,  Ching-Hsiang Hu ,  Wei-Ding Wu ,  Jui-Chun Weng ,  Ji-Hong Chiang ,  Yen-Chiang Liu ,  Jiun-Jie Chiou ,  Li-Yang Tu ,  Jia-Syuan Li ,  You-Cheng Jhang ,  Shin-Hua Chen ,  Lavanya Sanagavarapu ,  Han-Zong Pan ,  Hsi-Cheng Hsu

IPC分类号： G02B27/30 ,  H01L27/146 ,  H01L31/0232

摘要： Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm−3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.

公开(公告)号：US10532925B2

公开(公告)日：2020-01-14

申请号：US16114521

申请日：2018-08-28

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shyh-Wei Cheng ,  Chih-Yu Wang ,  Hsi-Cheng Hsu ,  Hsin-Yu Chen ,  Ji-Hong Chiang ,  Jui-Chun Weng ,  Wei-Ding Wu

IPC分类号： H01L49/02 ,  B81B7/00 ,  B81B3/00 ,  B81C1/00

摘要： The present disclosure relates to a micro-electromechanical system (MEMs) package. In some embodiments, the MEMs package has a plurality of conductive interconnect layers disposed within a dielectric structure over an upper surface of a first substrate. A heating element is electrically coupled to a semiconductor device within the first substrate by one or more of the plurality of conductive interconnect layers. The heating element is vertically separated from the first substrate by the dielectric structure. A MEMs substrate is coupled to the first substrate and has a MEMs device. A hermetically sealed chamber surrounding the MEMs device is disposed between the first substrate and the MEMs substrate. An out-gassing material is disposed laterally between the hermetically sealed chamber and the heating element.

公开(公告)号：US10131536B2

公开(公告)日：2018-11-20

申请号：US15176365

申请日：2016-06-08

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shyh-Wei Cheng ,  Chih-Yu Wang ,  Hsi-Cheng Hsu ,  Hsin-Yu Chen ,  Ji-Hong Chiang ,  Jui-Chun Weng ,  Wei-Ding Wu

IPC分类号： H01L29/84 ,  B81B7/00 ,  B81B3/00 ,  B81C1/00 ,  H01L49/02

摘要： The present disclosure relates to a MEMs package having a heating element configured to adjust a pressure within a hermetically sealed chamber by inducing out-gassing of into the chamber, and an associated method. In some embodiments, the MEMs package has a CMOS substrate having one or more semiconductor devices arranged within a semiconductor body. A MEMs structure is connected to the CMOS substrate and has a micro-electromechanical (MEMs) device. The CMOS substrate and the MEMs structure form a hermetically sealed chamber abutting the MEMs device. A heating element is electrically coupled to the one or more semiconductor devices and is separated from the hermetically sealed chamber by an out-gassing layer arranged along an interior surface of the hermetically sealed chamber. By operating the heating element to cause the out-gassing layer to release a gas, the pressure of the hermetically sealed chamber can be adjusted after it is formed.

公开(公告)号：US11454820B2

公开(公告)日：2022-09-27

申请号：US16656290

申请日：2019-10-17

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsin-Yu Chen ,  Yen-Chiang Liu ,  Jiun-Jie Chiou ,  Jia-Syuan Li ,  You-Cheng Jhang ,  Shin-Hua Chen ,  Lavanya Sanagavarapu ,  Han-Zong Pan ,  Chun-Peng Li ,  Chia-Chun Hung ,  Ching-Hsiang Hu ,  Wei-Ding Wu ,  Jui-Chun Weng ,  Ji-Hong Chiang ,  Hsi-Cheng Hsu

IPC分类号： G02B27/30 ,  G02B5/20 ,  G02B26/00 ,  H01L27/146 ,  H01L31/0216 ,  G06V40/13

摘要： Disclosed is a cost-effective method to fabricate a multifunctional collimator structure for contact image sensors to filter ambient infrared light to reduce noises. In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; a plurality of via holes; and a conductive layer, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction.