A SiC single crystal manufacturing apparatus of the present invention is a SiC single crystal manufacturing apparatus that manufactures a SiC single crystal by performing crystal growth on a growth surface of a seed crystal disposed inside a crucible, and the crucible 1 is able to accommodate a raw material M for a SiC single crystal therein, and includes a crucible lower portion 1A and a crucible upper portion 1B, the crucible lower portion including a bottom portion 1Aa and a side portion 1Ab, and the crucible upper portion including a top portion 1Ba provided with a seed crystal installation portion 1Bc for installing a seed crystal SD and a side portion 1Bb. A male thread 1AAa is provided at an outer circumference 1AA of the side portion 1Ab of the crucible lower portion 1A, a female thread 1BBa engaging with the male thread is provided at an inner circumference 1BB of the side portion 1Bb of the crucible upper portion 1B, and the crucible includes a rotation mechanism 10 that is configured to relatively move the crucible upper portion 1B and the crucible lower portion 1A in a vertical direction by rotating at least one of the crucible upper portion 1B and the crucible lower portion 1A.