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    Method for producing silicon carbide single crystal
    1.
    发明授权
    Method for producing silicon carbide single crystal 有权

    公开(公告)号：US11078598B2

    公开(公告)日：2021-08-03

    申请号：US16468413

    申请日：2017-12-15

    Applicant: SHOWA DENKO K.K.

    Inventor： Yohei Fujikawa ,  Hidetaka Takaba

    IPC: C30B29/36 ,  C30B23/06 ,  C30B23/00

    Abstract: A silicon carbide single crystal is grown by a method comprising: a single crystal growth step of growing a silicon carbide single crystal so as to not close a gap between a side surface of the silicon carbide single crystal growing on a silicon carbide seed crystal, and an inner-side surface of a guide member and a crystal deposited on the inner-side surface of the guide member; a crystal growth termination step of terminating crystal growth by temperature lowering; and a gap enlargement step, performed between the single crystal growth step and the crystal growth termination step, of enlarging the gap by maintaining a difference, Pin−Pout, between partial pressure Pin of Si2C in a source gas in the vicinity of an inlet of the gap and partial pressure Pout of Si2C in a source gas in the vicinity of an outlet of the gap at 0.18 torr or less.

    Shielding member and single crystal growth device having the same
    2.
    发明授权
    Shielding member and single crystal growth device having the same 有权

    公开(公告)号：US10995418B2

    公开(公告)日：2021-05-04

    申请号：US16406539

    申请日：2019-05-08

    Applicant: SHOWA DENKO K.K.

    Inventor： Yohei Fujikawa

    IPC: C30B23/02 ,  C30B23/06 ,  C30B23/00 ,  C30B35/00 ,  C30B29/36

    Abstract: A shielding member, wherein the shielding member is formed of at least one of structure which has a non-flat plate shape having an inclined surface, and the inclined surface is located on a side of a substrate support part when the shielding member is disposed in a single crystal growth device, wherein the single crystal growth device comprising: a crystal growth container; a source storage part that is positioned at a lower inner part of the crystal growth container; the substrate support part, wherein the support part is disposed above the source storage part and supports a substrate to make the substrate face the source storage part; and a heating device that is disposed on an outer circumference of the crystal growth container, wherein the shielding member is disposed between the source storage part and the substrate support part, and wherein a single crystal of a source is grown on the substrate by sublimating the source from the source storage part.

    SINGLE CRYSTAL GROWTH METHOD
    3.
    发明申请
    SINGLE CRYSTAL GROWTH METHOD 审中-公开

    公开(公告)号：US20200080229A1

    公开(公告)日：2020-03-12

    申请号：US16559875

    申请日：2019-09-04

    Applicant: SHOWA DENKO K.K.

    Inventor： Yohei Fujikawa

    IPC: C30B23/06 ,  C30B23/00 ,  C30B29/36 ,  C30B29/60

    Abstract: The present invention provides a single crystal growth method capable of suppressing the recrystallization of the raw material gas subjected to sublimation on the surface of the raw material, and suppressing the generation of different polytypes in the crystal growing single crystal. The single crystal growth method is carried out in a crucible comprising an inner bottom for providing a raw material and a crystal mounting part facing the inner bottom. The method comprises in the following order: providing the raw material in the inner bottom; covering at least a part of a surface of the raw material with a metal carbide powder in a plan view from the crystal mounting part; and growing a single crystal disposed in the crystal mounting part by sublimating the raw material by heating.

    METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL INGOT
    4.
    发明申请
    METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL INGOT 审中-公开

    公开(公告)号：US20190194819A1

    公开(公告)日：2019-06-27

    申请号：US16221671

    申请日：2018-12-17

    Applicant: SHOWA DENKO K.K.

    Inventor： Yohei Fujikawa

    IPC: C30B23/00 ,  C30B29/36 ,  C30B35/00

    CPC classification number: C30B23/002 ,  C30B29/36 ,  C30B35/002

    Abstract: The present invention provides a method including: a temperature raising step of raising a temperature in a crystal growing furnace with a silicon carbide raw material and a silicon carbide seed crystal arranged therein to a crystal growing temperature; a single crystal growing step of maintaining the crystal growing temperature and causing a silicon carbide single crystal to grow on the silicon carbide seed crystal; and a temperature lowering step of lowering the temperature in the crystal growing furnace from the crystal growing temperature to stop growth of the silicon carbide single crystal, in which the method further comprises, between the single crystal growing step and the temperature lowering step, a temperature lowering preparation step of maintaining the temperature in the crystal growing furnace at the crystal growing temperature and causing concentration of nitrogen gas in the crystal growing furnace to increase to be higher than concentration of nitrogen gas in the temperature raising step and in the single crystal growing step, and in which the concentration of the nitrogens gas in the crystal growing furnace in the temperature lowering step is higher than the concentration of the nitrogen gas in the temperature raising step and the single crystal growing step.

    SiC single crystal manufacturing apparatus and SiC single crystal manufacturing method
    6.
    发明授权
    SiC single crystal manufacturing apparatus and SiC single crystal manufacturing method 有权

    公开(公告)号：US11306412B2

    公开(公告)日：2022-04-19

    申请号：US16681328

    申请日：2019-11-12

    Applicant: SHOWA DENKO K.K.

    Inventor： Yohei Fujikawa

    IPC: C30B35/00 ,  C30B29/36

    Abstract: A SiC single crystal manufacturing apparatus of the present invention is a SiC single crystal manufacturing apparatus that manufactures a SiC single crystal by performing crystal growth on a growth surface of a seed crystal disposed inside a crucible, and the crucible 1 is able to accommodate a raw material M for a SiC single crystal therein, and includes a crucible lower portion 1A and a crucible upper portion 1B, the crucible lower portion including a bottom portion 1Aa and a side portion 1Ab, and the crucible upper portion including a top portion 1Ba provided with a seed crystal installation portion 1Bc for installing a seed crystal SD and a side portion 1Bb. A male thread 1AAa is provided at an outer circumference 1AA of the side portion 1Ab of the crucible lower portion 1A, a female thread 1BBa engaging with the male thread is provided at an inner circumference 1BB of the side portion 1Bb of the crucible upper portion 1B, and the crucible includes a rotation mechanism 10 that is configured to relatively move the crucible upper portion 1B and the crucible lower portion 1A in a vertical direction by rotating at least one of the crucible upper portion 1B and the crucible lower portion 1A.

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