Invention Grant
- Patent Title: Memory device
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Application No.: US17121015Application Date: 2020-12-14
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Publication No.: US11309033B2Publication Date: 2022-04-19
- Inventor: Taehyo Kim , Daeseok Byeon , Youngmin Jo , Seungwon Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Main IPC: G11C16/22
- IPC: G11C16/22 ; G11C16/04 ; G11C16/10 ; G11C16/26 ; H01L27/11556 ; H01L27/11529 ; H01L27/11573 ; H01L25/065 ; H01L25/18 ; H01L23/00 ; H01L27/11582

Abstract:
A memory device including: a memory area having a first memory block and a second memory block; and a control logic configured to control the first memory block and the second memory block in a first mode and a second mode, wherein in the first mode only a control operation for the first memory block is executable, and in the second mode control operations for the first memory block and the second memory block are executable, wherein the control logic counts the number of accesses made to the second memory block in the first mode, and stores the number of accesses as scan data in the second memory block.
Public/Granted literature
- US20210335427A1 MEMORY DEVICE Public/Granted day:2021-10-28
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