Invention Grant
- Patent Title: Single metallization scheme for gate, source, and drain contact integration
-
Application No.: US16684616Application Date: 2019-11-15
-
Publication No.: US11309221B2Publication Date: 2022-04-19
- Inventor: Andrew Greene , Victor W. C. Chan , Gangadhara Raja Muthinti
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Samuel Waldbaum
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/8238 ; H01L21/768 ; H01L23/532 ; H01L21/28 ; H01L27/092 ; H01L23/522
Abstract:
A technique relates to a semiconductor device. One or more N-type field effect transistor (NFET) gates and one or more P-type field effect transistor (PFET) gates are formed. Source and drain (S/D) contacts are formed, at least one material of the S/D contacts being formed in the PFET gates. Insulating material is deposited as self-aligned caps above the NFET gates and the PFET gates, while the insulating material is also formed as insulator portions adjacent to the S/D contacts. Middle of the line (MOL) contacts are formed above the S/D contacts.
Public/Granted literature
- US20200083117A1 SINGLE METALLIZATION SCHEME FOR GATE, SOURCE, AND DRAIN CONTACT INTEGRATION Public/Granted day:2020-03-12
Information query
IPC分类:
