Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16757766Application Date: 2017-12-21
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Publication No.: US11309416B2Publication Date: 2022-04-19
- Inventor: Hideyuki Hatta , Shiro Hino , Katsutoshi Sugawara
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Xsensus LLP
- International Application: PCT/JP2017/045910 WO 20171221
- International Announcement: WO2019/123601 WO 20190627
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/08 ; H01L29/10 ; H01L29/16 ; H01L29/423 ; H01L29/66 ; H01L29/739
Abstract:
A drift layer has a first conductivity type. A well region has a second conductivity type. A well contact region has a resistivity lower than that of the well region. A source contact region is provided on the well region, separated from the drift layer by the well region, and has the first conductivity type. A source resistance region is provided on the well region, separated from the drift layer by the well region, is adjacent to the source contact region, has the first conductivity type, and has a sheet resistance higher than that of the source contact region. A source electrode contacts the source contact region, the well contact region, and the source resistance region, and is continuous with the channel at least through the source resistance region.
Public/Granted literature
- US20200295183A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-09-17
Information query
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