Invention Grant
- Patent Title: Field effect transistor (FET) configured to phase shift a radar signal using first and second variable voltages applied to a gate and a back gate of the FET
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Application No.: US16945438Application Date: 2020-07-31
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Publication No.: US11309870B2Publication Date: 2022-04-19
- Inventor: Jongchang Kang , Ara Kurdoghlian , Mehran Mokhtari , Igal Bilik
- Applicant: GM GLOBAL TECHNOLOGY OPERATIONS LLC
- Applicant Address: US MI Detroit
- Assignee: GM GLOBAL TECHNOLOGY OPERATIONS LLC
- Current Assignee: GM GLOBAL TECHNOLOGY OPERATIONS LLC
- Current Assignee Address: US MI Detroit
- Agency: Lorenz & Kopf LLP
- Main IPC: H03H11/20
- IPC: H03H11/20 ; H01P1/18 ; H01Q3/36 ; H01P1/185 ; H03H11/16

Abstract:
The present application relates to a method and apparatus for implementing a radar array including a gate bias source for providing a first variable voltage, a back gate well control for providing a second variable voltage, and a field effect transistor having a drain, a source, a gate and a back gate well control, the field effect transistor being further configured to couple an alternating current radar signal between the drain and the source and to adjust a phase of the alternating current radar in response to first variable voltage applied to the gate and the second variable voltage applied to the back gate well control.
Public/Granted literature
- US20220037752A1 FIELD EFFECT TRANSISTOR PHASE SHIFTER Public/Granted day:2022-02-03
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