公开(公告)号：US12027769B2

公开(公告)日：2024-07-02

申请号：US17722811

申请日：2022-04-18

Applicant: Huawei Technologies Co., Ltd.

Inventor： Xiao Zhou ,  Zui Tao ,  Jie Zhao ,  Shuguang Xiao ,  Xin Luo

IPC: H01Q19/10 ,  H01P1/185

CPC classification number: H01Q19/106 ,  H01P1/185

Abstract: An antenna has a reflector and an active element. The reflector includes a multi-segment metal structure having a length within a first value range. The multi-segment metal structure includes a first metal structure connected to a second metal structure. A PIN diode is disposed on the first metal structure. The first metal structure is parallel to a polarization direction of the active element. The second metal structure is perpendicular to the first metal structure.

公开(公告)号：US20230420815A1

公开(公告)日：2023-12-28

申请号：US18101364

申请日：2023-01-25

Applicant: Fujikura Ltd.

Inventor： Yusuke Uemichi

IPC: H01P1/185

CPC classification number: H01P1/185

Abstract: A digital phase shifter includes a plurality of digital phase shift circuit groups in which a plurality of digital phase shift circuits are connected in cascade, one or more relay digital phase shift circuits (digital phase shift circuits) provided between two digital phase shift circuit groups, and two or more bend-type connection units configured to connect one of the two digital phase shift circuit group and the relay digital phase shift circuit and connect the other of the two digital phase shift circuit groups and the relay digital phase shift circuit. At least one of the digital phase shift circuits constituting at least one digital phase shift circuit group and the relay digital phase shift circuit is a mitigation circuit that mitigates the distribution of phase shift amounts.

公开(公告)号：US20220336961A1

公开(公告)日：2022-10-20

申请号：US17722811

申请日：2022-04-18

Applicant: Huawei Technologies Co., Ltd.

Inventor： Xiao Zhou ,  Zui Tao ,  Jie Zhao ,  Shuguang Xiao ,  Xin Luo

IPC: H01Q19/10 ,  H01P1/185

Abstract: An antenna has a reflector and an active element. The reflector includes a multi-segment metal structure having a length within a first value range. The multi-segment metal structure includes a first metal structure connected to a second metal structure. A PIN diode is disposed on the first metal structure. The first metal structure is parallel to a polarization direction of the active element. The second metal structure is perpendicular to the first metal structure.

公开(公告)号：US20220247055A1

公开(公告)日：2022-08-04

申请号：US17727258

申请日：2022-04-22

Applicant: Huawei Technologies Co., Ltd.

Inventor： Yuantao Zhou ,  Ming Wu ,  Pengyu Zhang

IPC: H01P1/185 ,  H01P11/00 ,  H01Q3/36

Abstract: This application provides a semiconductor switch device, a manufacturing method thereof, and a solid-state phase shifter. The semiconductor switch device includes a first semiconductor layer, intrinsic layers, and second semiconductor layers that are stacked. There are at least two intrinsic layers. The second semiconductors are in a one-to-one correspondence with the intrinsic layers, and each second semiconductor layer is stacked on a side of a corresponding intrinsic layer away from the first semiconductor layer. The first semiconductor layer forms one PIN diode together with each first intrinsic layer and each second semiconductor layer. Any two adjacent PIN diodes are electrically isolated. Automatic parameter matching between the two PIN diodes is implemented by using a geometrically symmetric figure with centers of the two PIN diodes aligned, to improve linearity. In addition, the entire semiconductor switch device has a compact structure, to improve an integration degree and reduce costs.

公开(公告)号：US10249923B2

公开(公告)日：2019-04-02

申请号：US15511713

申请日：2016-08-05

Applicant: NANJING MILEWEI CORP.

Inventor： Chuan Gai ,  Dong Xia

IPC: H01P1/185 ,  H01P1/18 ,  H03H7/01 ,  H03H7/20 ,  H03H7/21 ,  H03H7/18 ,  H03H7/19 ,  H01P5/18

Abstract: The present invention discloses an ultra wide band fixed phase shifter based on a capacitive load, which includes N physically separated phase shift units, and each phase shift unit includes an orthocoupler, first and second transmission lines, and first and second capacitive loads, wherein the orthocoupler includes an input end, a coupling end, a direct-connection end and an isolation end, one end of the first transmission line serves as a signal input end of the phase shift unit and the other end is connected with the input end of the orthocoupler, one end of the second transmission line serves as a signal output end of the phase shift unit and the other end is connected with the isolation end of the orthocoupler; one end of the first capacitive load is connected with the coupling end of the orthocoupler and the other end is grounded; one end of the second capacitive load is connected with the direct-connection end of the orthocoupler and the other end is grounded. The ultra wide band fixed phase shifter based on a capacitive load has compact structure, small area occupation and small insertion loss, does not need extra power supply and logical control, and can be widely applied.

公开(公告)号：US20050179507A1

公开(公告)日：2005-08-18

申请号：US11059318

申请日：2005-02-17

Applicant: Jin Yoon

Inventor： Jin Yoon

IPC: H01P1/18 ,  H01P1/185

CPC classification number: H01P1/185

Abstract: A phase shifter which uses bragg gratings and having tunable phase shift functions with respect to input signals in an RF band without using a separate RF device. The phase shifter includes a dielectric layer, a first conductive layer formed on an upper surface of the dielectric layer lengthwise along the dielectric layer so as to provide a signal path for the input signal, a second conductive layer formed at a first end of a lower surface of the dielectric layer so as to form bragg gratings lengthwise along the dielectric layer, a third conductive layer formed at a second end of the lower surface of the dielectric layer in line with the second conductive layer so as to form bragg gratings lengthwise along the dielectric layer, and a moving unit for adjusting a distance between the second conductive layer and the third conductive layer within a predetermined length. The phase of the signal of the RF band is shifted by adjusting the distance between the second and third conductive layers without using a separate RF device, thereby significantly reducing the manufacturing cost for the phase shifter.

Abstract translation: 一种移相器，其使用布拉格光栅并且相对于RF频带中的输入信号具有可调谐相移功能，而不使用单独的RF器件。 移相器包括电介质层，第一导电层，沿着电介质层纵向形成在电介质层的上表面上，以便为输入信号提供信号路径;第二导电层形成在下部的第一端 电介质层的表面，以沿着电介质层纵向形成布拉格光栅;第三导电层，形成在电介质层的下表面的第二端，与第二导电层一致，以便沿着第二导电层纵向形成布拉格光栅 电介质层和用于在预定长度内调节第二导电层和第三导电层之间的距离的移动单元。 RF带的信号的相位通过调整第二和第三导电层之间的距离而不使用单独的RF器件来移动，从而显着降低了移相器的制造成本。

公开(公告)号：US6091311A

公开(公告)日：2000-07-18

申请号：US915715

申请日：1997-08-21

Applicant: William M. Waters

Inventor： William M. Waters

IPC: H01P1/185

CPC classification number: H01P1/185

Abstract: The stripline-slotline digital phase shifter is located between a ground plane associated with a patch antenna and another ground plane associated with the other patch antenna, or other output circuits. It is comprised of a section of stripline adjacent to a slot in ground plane associated with the receiving patch antenna which transitions an input electromagnetic signal to a plurality of oval slotlines, called bit circuits, of varying lengths which form a delay circuit by shifting the phase of the input electromagnetic signal. The varying lengths of slotline are switched into and out of the circuit to provide a predetermined amount of delay and the phase adjusted electromagnetic signal is transitioned to portion of stripline adjacent to a slot associated with the transmission patch antenna or other output circuits.

Abstract translation: 带状线槽数字移相器位于与贴片天线相关联的接地平面和与另一贴片天线相关联的另一接地平面或其它输出电路之间。 它包括一条与接收平面天线相关的接地平面中的一个缝隙的一段带状线，它将一个输入的电磁信号转换成多个长度不等的椭圆形槽线，称为比特电路，这些长度线通过移动相位而形成一个延迟电路 的输入电磁信号。 时隙线的变化长度被切换到电路中以便提供预定量的延迟，并且相位调整的电磁信号被转换到与传输贴片天线或其它输出电路相关联的时隙附近的带状线的部分。

公开(公告)号：US5708397A

公开(公告)日：1998-01-13

申请号：US669837

申请日：1996-06-26

Applicant: Nagahisa Furutani ,  Tsuneyuki Tanaka

Inventor： Nagahisa Furutani ,  Tsuneyuki Tanaka

IPC: H03B5/12 ,  H01P1/185 ,  H03B1/00 ,  H03B5/18

CPC classification number: H03B5/1852 ,  H01P1/185 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/19041 ,  H01L2924/3011 ,  H03B2201/0208 ,  H03B2201/0225

Abstract: A high-frequency circuit device includes a varactor diode having a first terminal and a second terminal, a first strip line connected to the first terminal of the varactor diode, a voltage being applied to the varactor diode via the first terminal, a second strip line having a first end connected to the second terminal of the varactor diode, and a second open end. The second strip line has a length so as to obtain an equivalent strip line length taking into capacitances of the varactor diode and the second strip line. The equivalent strip line length determines a characteristic of the high-frequency circuit device.

Abstract translation: 高频电路装置包括具有第一端子和第二端子的变容二极管，连接到变容二极管的第一端子的第一带状线，经由第一端子施加到变容二极管的电压，第二带状线 具有连接到变容二极管的第二端子的第一端和第二开口端。 第二带状线具有长度，以获得占据变容二极管和第二带状线的电容的等效带状线长度。 等效带线长度决定了高频电路装置的特性。

公开(公告)号：US5385883A

公开(公告)日：1995-01-31

申请号：US64383

申请日：1993-05-17

Applicant: Erik H. Lenzing ,  Charles D. Hechtman

Inventor： Erik H. Lenzing ,  Charles D. Hechtman

IPC: H01P1/185 ,  H01P1/18 ,  H01B12/00 ,  H01L39/00

CPC classification number: H01P1/185 ,  Y10S505/70 ,  Y10S505/701 ,  Y10S505/866

Abstract: The present invention is a superconducting opto-electronic phase shifter which is achieved by illuminating a superconducting microstrip line, which is fabricated on a dielectric substrate, with an optical beam of a predetermined intensity and shape. Because the superconducting microstrip will exhibit a local surface resistance when and where illuminated, the microstrip line will be artificially narrowed thereby producing a phase shift. This occurs because as the width of a superconducting microstrip line narrows the velocity of the carder signal increases. Therefore, if the illumination of the superconducting microstrip line causes a local surface resistance, then the surface impedance of the microstrip line is increased causing the effective width of the microstrip line to decrease. Hence, the artificial decrease in the width of the microstrip will cause the phase of the carrier signal to shift.

Abstract translation: 本发明是一种超导光电子移相器，其通过用预定强度和形状的光束照射在电介质基板上制造的超导微带线来实现。 因为超导微带线在照射时和在哪里会表现出局部表面电阻，所以微带线将被人为地变窄从而产生相移。 发生这种情况是因为当超导微带线的宽度变窄时，信号信号的速度增加。 因此，如果超导微带线的照明导致局部表面电阻，则微带线的表面阻抗增加，导致微带线的有效宽度减小。 因此，微带宽度的人为减少将导致载波信号的相位移位。

公开(公告)号：US5237629A

公开(公告)日：1993-08-17

申请号：US854024

申请日：1992-03-19

Applicant: Vincent M. Hietala ,  Stanley H. Kravitz ,  Gregory A. Vawter

Inventor： Vincent M. Hietala ,  Stanley H. Kravitz ,  Gregory A. Vawter

IPC: G02F1/015 ,  G02F1/025 ,  G02F1/035 ,  H01P1/185 ,  H01Q3/36

CPC classification number: G02F1/025 ,  G02F1/0356 ,  H01P1/185 ,  H01Q3/36 ,  G02F2001/0151

Abstract: A digitally controlled distributed phase shifter is comprised of N phase shifters. Digital control is achieved by using N binary length-weighted electrodes located on the top surface of a waveguide. A control terminal is attached to each electrode thereby allowing the application of a control signal. The control signal is either one or two discrete bias voltages. The application of the discrete bias voltages changes the modal index of a portion of the waveguide that corresponds to a length of the electrode to which the bias voltage is applied, thereby causing the phase to change through the underlying portion of the waveguide. The digitally controlled distributed phase shift network has a total phase shift comprised of the sum of the individual phase shifters.

Abstract translation: 数字控制分布式移相器由N个移相器组成。 通过使用位于波导顶表面上的N个二进制长度加权电极来实现数字控制。 控制端子连接到每个电极，从而允许施加控制信号。 控制信号是一个或两个离散偏置电压。 离散偏置电压的应用改变了对应于施加偏置电压的电极的长度的波导的一部分的模态指数，从而导致相位通过波导的下面部分改变。 数字控制的分布式相移网络具有由各个移相器的总和组成的总相移。