Invention Grant
- Patent Title: Read retry to selectively disable on-die ECC
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Application No.: US16875642Application Date: 2020-05-15
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Publication No.: US11314589B2Publication Date: 2022-04-26
- Inventor: Kuljit S. Bains , Rajat Agarwal , Jongwon Lee
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Compass IP Law PC
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G11C11/4096

Abstract:
A memory device that performs internal ECC (error checking and correction) can selectively return read data with application of the internal ECC or without application of the internal ECC, in response to different read commands from the memory controller. The memory device can normally apply ECC and return corrected data in response to a normal read command. In response to a retry command, the memory device can return the read data without application of the internal ECC.
Public/Granted literature
- US20200278906A1 READ RETRY TO SELECTIVELY DISABLE ON-DIE ECC Public/Granted day:2020-09-03
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