Invention Grant
- Patent Title: Semiconductor storing apparatus and pre-charge method
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Application No.: US17216713Application Date: 2021-03-30
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Publication No.: US11315612B2Publication Date: 2022-04-26
- Inventor: Sho Okabe
- Applicant: Winbond Electronics Corp.
- Applicant Address: TW Taichung
- Assignee: Winbond Electronics Corp.
- Current Assignee: Winbond Electronics Corp.
- Current Assignee Address: TW Taichung
- Agency: JCIPRNET
- Priority: JPJP2020-067352 20200403
- Main IPC: G11C7/12
- IPC: G11C7/12 ; G11C7/10 ; G11C5/14 ; G11C16/04 ; G11C16/32 ; G11C7/22
Abstract:
A semiconductor storing apparatus capable of suppressing a peak current in a pre-charge operation and shortening a sense time is provided. A pre-charge method of a bit line of an NAND type flash memory includes: turning on a transistor (BLPRE) and supplying a pre-charge voltage to a sense node (SNS) at time (t1); turning on a transistor (BLCLAMP) connected to the sense node (SNS) and used for generating a clamp voltage and turning on a transistor (BLCN) connected to a node (BLS) at time (t2), turning on a transistor (BLSe/BLSo) connected between the node (BLS) and a bit line (GBLe/GBLo) at time (t3), and performing the pre-charge operation on the bit line.
Public/Granted literature
- US20210312957A1 SEMICONDUCTOR STORING APPARATUS AND PRE-CHARGE METHOD Public/Granted day:2021-10-07
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