- 专利标题： Semiconductor memory device
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申请号： US17021121申请日： 2020-09-15
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公开(公告)号： US11315950B2公开(公告)日： 2022-04-26
- 发明人: Toshifumi Minami , Atsuhiro Sato , Keisuke Yonehama , Yasuyuki Baba , Hiroshi Shinohara , Hideyuki Kamata , Teppei Higashitsuji
- 申请人： KIOXIA CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： KIOXIA CORPORATION
- 当前专利权人： KIOXIA CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Kim & Stewart LLP
- 优先权： JP2014-182641 20140908
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H01L27/11565 ; H01L27/1157 ; H01L27/11578 ; H01L27/11551 ; H01L27/11563 ; H01L27/11556 ; H01L29/792
摘要：
A semiconductor memory device includes a conducting layer and an insulating layer that are disposed above a semiconductor substrate, a plurality of pillars that extend in a direction which crosses a surface of the semiconductor substrate, and a plate that is disposed between the plurality of pillars and extends in the same direction as the pillars. A surface of the plate, which faces the pillars, has convex portions and non-convex portions.
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