公开(公告)号：US11621278B2

公开(公告)日：2023-04-04

申请号：US17700951

申请日：2022-03-22

申请人： KIOXIA CORPORATION

发明人： Toshifumi Minami ,  Atsuhiro Sato ,  Keisuke Yonehama ,  Yasuyuki Baba ,  Hiroshi Shinohara ,  Hideyuki Kamata ,  Teppei Higashitsuji

IPC分类号： H01L27/11582 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/11551 ,  H01L29/792 ,  H01L27/11563 ,  H01L27/11556

摘要： A semiconductor memory device includes a conducting layer and an insulating layer that are disposed above a semiconductor substrate, a plurality of pillars that extend in a direction which crosses a surface of the semiconductor substrate, and a plate that is disposed between the plurality of pillars and extends in the same direction as the pillars. A surface of the plate, which faces the pillars, has convex portions and non-convex portions.

公开(公告)号：US11705204B2

公开(公告)日：2023-07-18

申请号：US17585370

申请日：2022-01-26

申请人： KIOXIA CORPORATION

发明人： Masanobu Shirakawa ,  Takuya Futatsuyama ,  Kenichi Abe ,  Hiroshi Nakamura ,  Keisuke Yonehama ,  Atsuhiro Sato ,  Hiroshi Shinohara ,  Yasuyuki Baba ,  Toshifumi Minami

IPC分类号： G11C16/00 ,  G11C16/14 ,  G11C16/04 ,  G11C11/56 ,  H10B43/27 ,  H10B43/35 ,  G11C16/08 ,  G11C16/10 ,  G11C16/26 ,  G11C29/42 ,  G11C16/34

CPC分类号： G11C16/14 ,  G11C11/5635 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/26 ,  G11C29/42 ,  H10B43/27 ,  H10B43/35 ,  G11C16/3445

摘要： A semiconductor memory device includes a first memory cell, a second memory cell above the first memory cell, a first word line electrically connected to a gate of the first memory cell, a second word line electrically connected to a gate of the second memory cell, and a control unit that performs an erasing operation on the first and second memory cells. During the erasing operation, the control unit applies a first voltage to a first word line and a second voltage higher than the first voltage to a second word line.

公开(公告)号：US11270773B2

公开(公告)日：2022-03-08

申请号：US17103504

申请日：2020-11-24

申请人： KIOXIA CORPORATION

发明人： Masanobu Shirakawa ,  Takuya Futatsuyama ,  Kenichi Abe ,  Hiroshi Nakamura ,  Keisuke Yonehama ,  Atsuhiro Sato ,  Hiroshi Shinohara ,  Yasuyuki Baba ,  Toshifumi Minami

IPC分类号： G11C16/00 ,  G11C16/14 ,  G11C16/04 ,  H01L27/1157 ,  H01L27/11582 ,  G11C11/56 ,  G11C16/08 ,  G11C16/10 ,  G11C16/26 ,  G11C29/42 ,  G11C16/34

摘要： A semiconductor memory device includes a first memory cell, a second memory cell above the first memory cell, a first word line electrically connected to a gate of the first memory cell, a second word line electrically connected to a gate of the second memory cell, and a control unit that performs an erasing operation on the first and second memory cells. During the erasing operation, the control unit applies a first voltage to a first word line and a second voltage higher than the first voltage to a second word line.

公开(公告)号：US12022657B2

公开(公告)日：2024-06-25

申请号：US18176656

申请日：2023-03-01

申请人： KIOXIA CORPORATION

发明人： Toshifumi Minami ,  Atsuhiro Sato ,  Keisuke Yonehama ,  Yasuyuki Baba ,  Hiroshi Shinohara ,  Hideyuki Kamata ,  Teppei Higashitsuji

IPC分类号： H10B43/27 ,  H01L29/792 ,  H10B41/20 ,  H10B41/27 ,  H10B43/00 ,  H10B43/10 ,  H10B43/20 ,  H10B43/35

CPC分类号： H10B43/27 ,  H01L29/7926 ,  H10B41/20 ,  H10B41/27 ,  H10B43/00 ,  H10B43/10 ,  H10B43/20 ,  H10B43/35

摘要： A semiconductor memory device includes a conducting layer and an insulating layer that are disposed above a semiconductor substrate, a plurality of pillars that extend in a direction which crosses a surface of the semiconductor substrate, and a plate that is disposed between the plurality of pillars and extends in the same direction as the pillars. A surface of the plate, which faces the pillars, has convex portions and non-convex portions.

公开(公告)号：US11315950B2

公开(公告)日：2022-04-26

申请号：US17021121

申请日：2020-09-15

申请人： KIOXIA CORPORATION

发明人： Toshifumi Minami ,  Atsuhiro Sato ,  Keisuke Yonehama ,  Yasuyuki Baba ,  Hiroshi Shinohara ,  Hideyuki Kamata ,  Teppei Higashitsuji

IPC分类号： H01L27/11582 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/11551 ,  H01L27/11563 ,  H01L27/11556 ,  H01L29/792

摘要： A semiconductor memory device includes a conducting layer and an insulating layer that are disposed above a semiconductor substrate, a plurality of pillars that extend in a direction which crosses a surface of the semiconductor substrate, and a plate that is disposed between the plurality of pillars and extends in the same direction as the pillars. A surface of the plate, which faces the pillars, has convex portions and non-convex portions.