Invention Grant
- Patent Title: Semiconductor device having asymmetrical source/drain
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Application No.: US16875314Application Date: 2020-05-15
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Publication No.: US11322590B2Publication Date: 2022-05-03
- Inventor: Jongki Jung , Myungil Kang , Yoonhae Kim , Kwanheum Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2015-0057193 20150423
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/161 ; H01L29/16 ; H01L29/165 ; H01L29/78 ; H01L29/06 ; H01L21/8234 ; H01L27/088 ; H01L29/66
Abstract:
A semiconductor device includes a substrate, a first active fin on the substrate, the first active fin including a first side surface and a second side surface opposing the first side surface, a second active fin on the substrate, the second active fin including a third side surface facing the second side surface and a fourth side surface opposing the third side surface of the second active fin, a first isolation layer on the first side surface of the first active fin, a second isolation layer between the second side surface of the first active fin and the third side surface of the second active fin, a third isolation layer on the fourth side surface of the second active fin and a merged source/drain on the first and second active fins.
Public/Granted literature
- US20200279919A1 SEMICONDUCTOR DEVICE HAVING ASYMMETRICAL SOURCE/DRAIN Public/Granted day:2020-09-03
Information query
IPC分类:
