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公开(公告)号：US20220246724A1
公开(公告)日：2022-08-04
申请号：US17725617
申请日：2022-04-21
发明人： Jongki Jung , Myungil KANG , Yoonhae KIM , Kwanheum LEE
IPC分类号： H01L29/08 , H01L29/161 , H01L29/16 , H01L29/165 , H01L29/78 , H01L29/06 , H01L21/8234 , H01L27/088 , H01L29/66
摘要： A semiconductor device includes a substrate, a first active fin on the substrate, the first active fin including a first side surface and a second side surface opposing the first side surface, a second active fin on the substrate, the second active fin including a third side surface facing the second side surface and a fourth side surface opposing the third side surface of the second active fin, a first isolation layer on the first side surface of the first active fin, a second isolation layer between the second side surface of the first active fin and the third side surface of the second active fin, a third isolation layer on the fourth side surface of the second active fin and a merged source/drain on the first and second active fins.
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公开(公告)号：US11942515B2
公开(公告)日：2024-03-26
申请号：US17725617
申请日：2022-04-21
发明人： Jongki Jung , Myungil Kang , Yoonhae Kim , Kwanheum Lee
IPC分类号： H01L29/08 , H01L21/8234 , H01L27/088 , H01L29/06 , H01L29/16 , H01L29/161 , H01L29/165 , H01L29/66 , H01L29/78
CPC分类号： H01L29/0847 , H01L21/823418 , H01L21/823431 , H01L27/0886 , H01L29/0653 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/6653 , H01L29/66545 , H01L29/7848 , H01L29/7851
摘要： A semiconductor device includes a substrate, a first active fin on the substrate, the first active fin including a first side surface and a second side surface opposing the first side surface, a second active fin on the substrate, the second active fin including a third side surface facing the second side surface and a fourth side surface opposing the third side surface of the second active fin, a first isolation layer on the first side surface of the first active fin, a second isolation layer between the second side surface of the first active fin and the third side surface of the second active fin, a third isolation layer on the fourth side surface of the second active fin and a merged source/drain on the first and second active fins.
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公开(公告)号：US09882004B2
公开(公告)日：2018-01-30
申请号：US15423406
申请日：2017-02-02
发明人： Jongki Jung , Myungil Kang , Yoonhae Kim , Kwanheum Lee
IPC分类号： H01L21/8234 , H01L29/08 , H01L27/088 , H01L29/06 , H01L29/66 , H01L29/78
CPC分类号： H01L29/0847 , H01L21/823418 , H01L21/823431 , H01L27/0886 , H01L29/0653 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/6653 , H01L29/66545 , H01L29/7848 , H01L29/7851
摘要： A semiconductor device includes a substrate, an active fin protruding from the substrate, and an asymmetric diamond-shaped source/drain disposed on an upper surface of the active fin. The source/drain includes a first crystal growth portion and a second crystal growth portion sharing a plane with the first crystal growth portion and having a lower surface disposed at a lower level than a lower surface of the first crystal growth portion.
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公开(公告)号：US11322590B2
公开(公告)日：2022-05-03
申请号：US16875314
申请日：2020-05-15
发明人： Jongki Jung , Myungil Kang , Yoonhae Kim , Kwanheum Lee
IPC分类号： H01L29/08 , H01L29/161 , H01L29/16 , H01L29/165 , H01L29/78 , H01L29/06 , H01L21/8234 , H01L27/088 , H01L29/66
摘要： A semiconductor device includes a substrate, a first active fin on the substrate, the first active fin including a first side surface and a second side surface opposing the first side surface, a second active fin on the substrate, the second active fin including a third side surface facing the second side surface and a fourth side surface opposing the third side surface of the second active fin, a first isolation layer on the first side surface of the first active fin, a second isolation layer between the second side surface of the first active fin and the third side surface of the second active fin, a third isolation layer on the fourth side surface of the second active fin and a merged source/drain on the first and second active fins.
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公开(公告)号：US10658463B2
公开(公告)日：2020-05-19
申请号：US15880969
申请日：2018-01-26
发明人： Jongki Jung , Myungil Kang , Yoonhae Kim , Kwanheum Lee
IPC分类号： H01L21/8234 , H01L29/08 , H01L29/161 , H01L29/16 , H01L29/165 , H01L29/78 , H01L29/06 , H01L27/088 , H01L29/66
摘要： A semiconductor device includes a substrate, an active fin protruding from the substrate, and an asymmetric diamond-shaped source/drain disposed on an upper surface of the active fin. The source/drain includes a first crystal growth portion and a second crystal growth portion sharing a plane with the first crystal growth portion and having a lower surface disposed at a lower level than a lower surface of the first crystal growth portion.
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