Invention Grant
- Patent Title: Cobalt based interconnects and methods of fabrication thereof
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Application No.: US16881530Application Date: 2020-05-22
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Publication No.: US11328993B2Publication Date: 2022-05-10
- Inventor: Christopher J. Jezewski , Tejaswi K. Indukuri , Ramanan V. Chebiam , Colin T. Carver
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt P.C.
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L21/768 ; H01L29/49 ; H01L29/78 ; H01L23/522

Abstract:
An embodiment includes a metal interconnect structure, comprising: a dielectric layer disposed on a substrate; an opening in the dielectric layer, wherein the opening has sidewalls and exposes a conductive region of at least one of the substrate and an interconnect line; an adhesive layer, comprising manganese, disposed over the conductive region and on the sidewalls; and a fill material, comprising cobalt, within the opening and on a surface of the adhesion layer. Other embodiments are described herein.
Public/Granted literature
- US20200286836A1 COBALT BASED INTERCONNECTS AND METHODS OF FABRICATION THEREOF Public/Granted day:2020-09-10
Information query
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