A plasma processing apparatus includes: a processing container; a stage provided in the processing container and configured to place a substrate on the stage; a gas introduction part provided in an upper portion of the processing container to face the stage and configured to introduce a processing gas into the processing container; and an annular exhaust path which is provided in an upper portion of a side wall of the processing container, and in which an opening toward a center of the processing container is formed at an inner circumferential side of the exhaust path, wherein the stage and the gas introduction part are respectively connected to high-frequency power supplies for generating plasma of the processing gas, wherein the exhaust path is grounded, wherein the plasma processing apparatus further comprises a grounded plasma distribution adjuster covering the opening, and wherein through-holes are formed in the plasma distribution adjuster.