公开(公告)号：US11236423B2

公开(公告)日：2022-02-01

申请号：US16726369

申请日：2019-12-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi Kamio ,  Tetsuya Saitou ,  Kai Shiono

IPC: C23C16/455 ,  C23C16/06 ,  C23C16/46 ,  C23C16/458 ,  B05C13/00

Abstract: A film-forming apparatus includes a processing container having a vacuum atmosphere therein, a stage having a heater and disposed in the processing container to load a substrate thereon, a gas discharge mechanism provided at a position to face the stage, and an exhaust part configured to exhaust an inside of the processing container. The gas discharge mechanism includes a gas intake port configured to introduce a processing gas into the processing container, a first plate-shaped member having a first opening formed in a more radially outward position than the gas intake port and a shower plate disposed between the first plate-shaped member and the stage to supply the processing gas from the first opening to a process space through a plurality of gas holes.

公开(公告)号：US11335542B2

公开(公告)日：2022-05-17

申请号：US16918728

申请日：2020-07-01

Applicant: Tokyo Electron Limited

Inventor： Tetsuya Saitou

IPC: H01J37/32 ,  H05H1/46

Abstract: A plasma processing apparatus includes: a processing container; a stage provided in the processing container and configured to place a substrate on the stage; a gas introduction part provided in an upper portion of the processing container to face the stage and configured to introduce a processing gas into the processing container; and an annular exhaust path which is provided in an upper portion of a side wall of the processing container, and in which an opening toward a center of the processing container is formed at an inner circumferential side of the exhaust path, wherein the stage and the gas introduction part are respectively connected to high-frequency power supplies for generating plasma of the processing gas, wherein the exhaust path is grounded, wherein the plasma processing apparatus further comprises a grounded plasma distribution adjuster covering the opening, and wherein through-holes are formed in the plasma distribution adjuster.

公开(公告)号：US11664266B2

公开(公告)日：2023-05-30

申请号：US16915046

申请日：2020-06-29

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Wagatsuma ,  Kentaro Asakura ,  Tetsuya Saitou ,  Masahisa Watanabe

IPC: H01L21/68 ,  H01L21/687 ,  H01L21/67 ,  H01L21/677

CPC classification number: H01L21/68742 ,  H01L21/67098 ,  H01L21/67751

Abstract: A substrate processing apparatus includes: a stage for performing at least one of heating and cooling on a substrate placed thereon and having a through-hole vertically penetrating the stage; a substrate support pin having an insertion portion inserted into the through-hole and configured so that the insertion portion protrudes from an upper surface of the stage through the through-hole; and a pin support member for supporting the substrate support pin. The substrate support pin has a flange portion located below a lower surface of the stage. The support member supports the substrate support pin by engagement with the flange portion. The through-hole is smaller than the flange portion. The substrate support pin includes a first member including the flange portion and a second member having the insertion portion. The first member has a sliding surface which slidably supports the second member.

公开(公告)号：US09885114B2

公开(公告)日：2018-02-06

申请号：US14659121

申请日：2015-03-16

Applicant: Tokyo Electron Limited

Inventor： Tetsuya Saitou ,  Tomohiro Oota ,  Toshio Takagi

IPC: C23F1/00 ,  H01L21/306 ,  C23C16/455 ,  C23C16/34 ,  C23C16/44 ,  C23C16/458 ,  C23C16/46

CPC classification number: C23C16/45565 ,  C23C16/34 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/45574 ,  C23C16/458 ,  C23C16/46

Abstract: A film forming apparatus for performing a film forming process by sequentially supplying a plurality of reactant gases to a substrate and supplying a replacement gas includes a mounting table configured to mount thereon a substrate, and a shower head having a flat surface facing the mounting table and a plurality of gas supply opening. An annular protrusion is provided at the shower head to form a gap between the annular protrusion and a top surface of the mounting table. A plurality of gas supply units is provided at a ceiling portion at an upper side of the shower head. Each gas supply unit has gas discharge openings formed along a circumferential direction. The diffusion space is disposed such that an outer periphery of the diffusion space is located at an inner side of an outer periphery of the substrate mounted on the mounting table in a plan view.

公开(公告)号：US11527404B2

公开(公告)日：2022-12-13

申请号：US16818491

申请日：2020-03-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tetsuya Saitou ,  Takashi Kamio ,  Kazuyoshi Yamazaki ,  Naoshige Fushimi

IPC: H01L21/02 ,  H01L21/67

Abstract: An apparatus includes: a processing container; a stage provided inside the processing container to place a substrate thereon; a gas supply mechanism for supplying a processing gas into the processing container; and at least three ultraviolet light sources provided to irradiate the processing gas inside the processing container with ultraviolet rays. The ultraviolet light sources are provided to be offset from a rotation axis of the stage in a plan view, and are arranged in a light source arrangement direction with distances from the ultraviolet light sources to the rotation axis being different from one another. The ultraviolet light sources include first to third ultraviolet light source. The third ultraviolet light source is arranged such that distances L1, L2, and L3 from the first to third ultraviolet light sources, respectively, to the rotation axis in a plan view satisfies a relationship of L1

公开(公告)号：US09441293B2

公开(公告)日：2016-09-13

申请号：US14388307

申请日：2013-03-18

Applicant: Tokyo Electron Limited

Inventor： Tetsuya Saitou

IPC: C23F1/00 ,  H01L21/306 ,  C23C16/455 ,  C23C16/34 ,  C23C16/44 ,  C23C16/458

CPC classification number: C23C16/45508 ,  C23C16/34 ,  C23C16/4412 ,  C23C16/45506 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/4583

Abstract: A film-forming apparatus forms a film by sequentially supplying a plurality of kinds of reaction gases to a substrate placed between a placing unit and a ceiling plate in a processing chamber having vacuum atmosphere and supplying a replacement gas between supply of one reaction gas and supply of next reaction gas. A central gas ejecting unit is disposed above the central portion of the substrate, and includes gas ejecting ports formed therein to spread the gases toward the outer side in the horizontal direction. A peripheral gas supply unit is disposed to surround the central gas ejecting unit. The peripheral gas supply unit includes a plurality of gas ejecting ports, which is formed in the circumferential direction such that the gases are spread in the horizontal direction toward the outer circumferential side and the central side of the substrate in a plan view.

Abstract translation: 成膜设备通过在具有真空气氛的处理室中将多种反应气体依次供给到放置单元和顶板之间的基板并在供给一个反应气体和供给之间供应替换气体而形成膜 的下一个反应气体。 中央气体喷射单元设置在基板的中心部分的上方，并且包括形成在其中的气体喷射口，以将气体向水平方向的外侧扩散。 周边气体供给单元设置为围绕中央气体喷射单元。 周边气体供给单元包括沿圆周方向形成的多个气体喷射口，使得气体在俯视图中朝向基板的外周侧和中央侧向水平方向扩散。

公开(公告)号：US20150047567A1

公开(公告)日：2015-02-19

申请号：US14388307

申请日：2013-03-18

Applicant: Tokyo Electron Limited

Inventor： Tetsuya Saitou

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/44

CPC classification number: C23C16/45508 ,  C23C16/34 ,  C23C16/4412 ,  C23C16/45506 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/4583

Abstract: A film-forming apparatus forms a film by sequentially supplying a plurality of kinds of reaction gases to a substrate placed between a placing unit and a ceiling plate in a processing chamber having vacuum atmosphere and supplying a replacement gas between supply of one reaction gas and supply of next reaction gas. A central gas ejecting unit is disposed above the central portion of the substrate, and includes gas ejecting ports formed therein to spread the gases toward the outer side in the horizontal direction. A peripheral gas supply unit is disposed to surround the central gas ejecting unit. The peripheral gas supply unit includes a plurality of gas ejecting ports, which is formed in the circumferential direction such that the gases are spread in the horizontal direction toward the outer circumferential side and the central side of the substrate in a plan view.

Abstract translation: 成膜设备通过在具有真空气氛的处理室中将多种反应气体依次供给到放置单元和顶板之间的基板并在供给一个反应气体和供给之间供应替换气体而形成膜 的下一个反应气体。 中央气体喷射单元设置在基板的中心部分的上方，并且包括形成在其中的气体喷射口，以将气体向水平方向的外侧扩散。 周边气体供给单元设置为围绕中央气体喷射单元。 周边气体供给单元包括沿圆周方向形成的多个气体喷射口，使得气体在俯视图中朝向基板的外周侧和中央侧向水平方向扩散。