A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer which has a main extension plane and which, in operation, is adapted to generate light in an active region and to emit light via a light-outcoupling surface, the active region extending from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.