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公开(公告)号：US11011887B2
公开(公告)日：2021-05-18
申请号：US16471330
申请日：2017-12-21
发明人： Sven Gerhard , Christoph Eichler , Alfred Lell , Bernhard Stojetz
摘要： A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a semiconductor layer sequence including an active layer having a main extension plane, configured to generate light in an active region during operation and configured to radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, and wherein the first and second contact regions adjoin one another.
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公开(公告)号：US10910226B2
公开(公告)日：2021-02-02
申请号：US16335968
申请日：2017-10-25
发明人： Alfred Lell , Georg Brüderl , John Brückner , Sven Gerhard , Muhammad Ali , Thomas Adlhoch
IPC分类号： H01L21/285 , H01S5/042 , H01L33/00 , H01L21/268
摘要： A method of manufacturing a semiconductor laser including providing a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, applying a continuous contact layer having at least one first partial region and at least one second partial region on a bottom side of the substrate opposite the semiconductor layer sequence, and locally annealing the contact layer only in the at least one first partial region.
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公开(公告)号：US10608413B2
公开(公告)日：2020-03-31
申请号：US16099644
申请日：2017-04-27
IPC分类号： H01S5/40 , H01S5/042 , H01S5/068 , H01S5/0683
摘要： The invention relates to a laser assembly, wherein, in one embodiment, the laser assembly (1) comprises a plurality of laser groups (2) each having at least one semiconductor laser (20). Furthermore, the laser assembly (1) contains a plurality of photothyristors (3), each laser group (2) being clearly assigned one of the photothyristors (3). The photothyristors (3) are each connected electrically in series with the associated laser group (2) and/or integrated in the associated laser group (2). Furthermore, the photothyristors (3) are each optically coupled to the associated laser group (2). A dark breakdown voltage (Ut) of each photothyristor (3) lies above an intended operating voltage (Ub) of the associated laser group (2).
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公开(公告)号：US20200091681A1
公开(公告)日：2020-03-19
申请号：US16471330
申请日：2017-12-21
发明人： Sven Gerhard , Christoph Eichler , Alfred Lell , Bernhard Stojetz
摘要： A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a semiconductor layer sequence including an active layer having a main extension plane, configured to generate light in an active region during operation and configured to radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, and wherein the first and second contact regions adjoin one another.
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公开(公告)号：US20190199056A1
公开(公告)日：2019-06-27
申请号：US16311868
申请日：2017-06-07
发明人： Christoph Eichler , Sven Gerhard , Alfred Lell , Bernhard Stojetz
摘要： A semiconductor light source includes a laser and at least one phosphor, wherein the laser includes a semiconductor body having at least one active zone that generates laser radiation, at least one resonator having resonator mirrors and having a longitudinal axis is formed in the laser so that the laser radiation is guided and amplified along the longitudinal axis during operation and the active zone is located at least partially in the resonator, and the phosphor is optically coupled to the resonator in a gap-free manner so that in the direction transverse to the longitudinal axis at least part of the laser radiation is introduced into the phosphor and converted into a secondary radiation having a greater wavelength.
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6.发明申请公开(公告)号：US20190089125A1
公开(公告)日：2019-03-21
申请号：US16081881
申请日：2017-03-03
发明人： Christoph Eichler , Sven Gerhard
IPC分类号： H01S5/022 , H01S5/10 , H01S5/22 , H01S5/40 , H01S5/028 , H01L33/62 , H01L33/44 , H01L33/20 , H01S5/024 , H01L33/64
CPC分类号： H01S5/02272 , H01L33/20 , H01L33/44 , H01L33/483 , H01L33/62 , H01L33/647 , H01L2933/0025 , H01L2933/0066 , H01L2933/0075 , H01S5/02469 , H01S5/028 , H01S5/1003 , H01S5/22 , H01S5/4025 , H01S2301/176
摘要： An optoelectronic lighting device includes an optoelectronic semiconductor chip including a top side and an underside opposite the top side, wherein a semiconductor layer sequence is formed between the top side and the underside, the semiconductor layer sequence includes an active zone that generates electromagnetic radiation, and a barrier for a bonding material flowing on account of cohesive bonding of the semiconductor chip to a carrier is formed at one of the top side and the underside.
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公开(公告)号：US20170330997A1
公开(公告)日：2017-11-16
申请号：US15531342
申请日：2015-11-19
发明人： Alfred Lell , Sven Gerhard
摘要： An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment the optoelectronic component includes a layer structure having an active zone for producing electromagnetic radiation, wherein the active zone is arranged in a first plane, wherein a recess is introduced into the surface of the layer structure, wherein the recess adjoins an end surface of the component, wherein the end surface is arranged in a second plane, wherein the second plane is arranged substantially perpendicularly to the first plane, wherein the recess has a bottom surface and a lateral surface wherein the lateral surface is arranged substantially perpendicularly to the end surface, wherein the lateral surface is arranged tilted at an angle not equal to 90° to the first plane of the active zone, and wherein the bottom surface is arranged in the region of the first plane of the active zone.
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公开(公告)号：US11688993B2
公开(公告)日：2023-06-27
申请号：US16628050
申请日：2018-07-26
发明人： John Brückner , Sven Gerhard
CPC分类号： H01S5/0202 , H01S5/0203 , H01S5/0207 , H01S5/22
摘要： A method of producing a plurality of laser diodes includes providing a plurality of laser bars in a composite, wherein the laser bars each include a plurality of laser diode elements arranged side by side, and the laser diode elements include a common substrate and a semiconductor layer sequence arranged on the substrate, and a division of the composite at a longitudinal separation plane extending between two adjacent laser bars leads to formation of laser facets of the laser diodes to be produced, and structuring the composite at at least one longitudinal separation plane, wherein a structured region is produced in the substrate.
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公开(公告)号：US10985529B2
公开(公告)日：2021-04-20
申请号：US16318084
申请日：2017-07-12
发明人： Sven Gerhard , Christoph Eichler , Alfred Lell , Bernhard Stojetz
摘要： A semiconductor laser diode includes a semiconductor layer sequence with an active layer having a main extension plane and that generates light in an active region and emits light via a light outcoupling surface during operation, wherein the active region extends from a rear surface opposite the light outcoupling surface to the light outcoupling surface along a longitudinal direction, the semiconductor layer sequence includes a trench structure having at least one trench or a plurality of trenches on at least one side laterally next to the active region, and each trench of the trench structure extends in a longitudinal direction and projects from a top side of the semiconductor layer sequence in a vertical direction into the semiconductor layer sequence, and the trench structure varies in a lateral and/or vertical and/or longitudinal direction with respect to properties of the at least one trench or the plurality of trenches.
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公开(公告)号：US20200287355A1
公开(公告)日：2020-09-10
申请号：US16305908
申请日：2017-06-13
摘要： A method of producing a laser diode bar includes producing a plurality of emitters arranged side by side, emitters each including a semiconductor layer sequence having an active layer that generates laser radiation, a p-contact on a first main surface of the laser diode bar and an n-contact on a second main surface of the laser diode bar opposite the first main surface, testing at least one optical and/or electrical property of the emitters, wherein emitters in which the optical and/or electrical property lies within a predetermined setpoint range are assigned to a group of first emitters, and emitters in which the at least one optical and/or electrical property lies outside the predetermined setpoint range are assigned to a group of second emitters, and electrically contacting first emitters, wherein second emitters are not electrically contacted so that they are not supplied with current during operation of the laser diode bar.
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