A data structure including two or more entries is maintained, where each entry corresponds to a range of consecutive wordlines in a block of a memory device. Each entry includes an operation counter to track a number of memory access operations performed on the range of consecutive wordlines in the block of the memory device. An indication of a memory access operation pertaining to the particular wordline is received. In response to the indication of the memory access operation pertaining to the particular wordline, a determination is made whether the particular wordline is within any range of consecutive wordlines that has a corresponding entry in the data structure. In response to the particular wordline being outside of any range of consecutive wordlines that has a corresponding entry in the data structure, a new entry for a new range of consecutive wordlines that includes the particular wordline is created.