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    TRACKING OPERATIONS PERFORMED AT A MEMORY DEVICE
    1.
    发明申请
    TRACKING OPERATIONS PERFORMED AT A MEMORY DEVICE 有权

    公开(公告)号：US20220293181A1

    公开(公告)日：2022-09-15

    申请号：US17751453

    申请日：2022-05-23

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Laura Varisco ,  Swetha Bongu ,  Kirthi Ravindra Kulkarni ,  Soujanya Venigalla

    IPC: G11C16/08 ,  G11C16/26 ,  G11C16/20 ,  G11C16/16

    Abstract: A system includes a memory device and a processing device coupled to the memory device. The processing device is to perform operations including maintaining a counter to track a number of memory access operations performed on a range of consecutive wordlines in a block of the memory device. The operations further include determining that the number of memory access operations performed on the range of consecutive wordlines satisfies a threshold criterion. The operations further include, responsive to the number of memory access operations performed on the range of consecutive wordlines satisfying the threshold criterion, causing a memory management operation to be performed at each wordline of the range of consecutive wordlines in the block of the memory device.

    Tracking operations performed at a memory device
    3.
    发明授权
    Tracking operations performed at a memory device 有权

    公开(公告)号：US11817151B2

    公开(公告)日：2023-11-14

    申请号：US17751453

    申请日：2022-05-23

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Laura Varisco ,  Swetha Bongu ,  Kirthi Ravindra Kulkarni ,  Soujanya Venigalla

    IPC: G11C16/08 ,  G11C16/16 ,  G11C16/20 ,  G11C16/26

    CPC classification number: G11C16/08 ,  G11C16/16 ,  G11C16/20 ,  G11C16/26

    Abstract: A system includes a memory device and a processing device coupled to the memory device. The processing device is to perform operations including maintaining a counter to track a number of memory access operations performed on a range of consecutive wordlines in a block of the memory device. The operations further include determining that the number of memory access operations performed on the range of consecutive wordlines satisfies a threshold criterion. The operations further include, responsive to the number of memory access operations performed on the range of consecutive wordlines satisfying the threshold criterion, causing a memory management operation to be performed at each wordline of the range of consecutive wordlines in the block of the memory device.

    TRACKING OPERATIONS PERFORMED AT A MEMORY DEVICE
    4.
    发明申请
    TRACKING OPERATIONS PERFORMED AT A MEMORY DEVICE 有权

    公开(公告)号：US20210202003A1

    公开(公告)日：2021-07-01

    申请号：US17020704

    申请日：2020-09-14

    Applicant: Micron Technology, Inc.

    Inventor： Laura Varisco ,  Swetha Bongu ,  Kirthi Ravindra Kulkarni ,  Soujanya Venigalla

    IPC: G11C16/08 ,  G11C16/16 ,  G11C16/20 ,  G11C16/26

    Abstract: A data structure including two or more entries is maintained, where each entry corresponds to a range of consecutive wordlines in a block of a memory device. Each entry includes an operation counter to track a number of memory access operations performed on the range of consecutive wordlines in the block of the memory device. An indication of a memory access operation pertaining to the particular wordline is received. In response to the indication of the memory access operation pertaining to the particular wordline, a determination is made whether the particular wordline is within any range of consecutive wordlines that has a corresponding entry in the data structure. In response to the particular wordline being outside of any range of consecutive wordlines that has a corresponding entry in the data structure, a new entry for a new range of consecutive wordlines that includes the particular wordline is created.

    Tracking operations performed at a memory device
    6.
    发明授权
    Tracking operations performed at a memory device 有权

    公开(公告)号：US11342024B2

    公开(公告)日：2022-05-24

    申请号：US17020704

    申请日：2020-09-14

    Applicant: Micron Technology, Inc.

    Inventor： Laura Varisco ,  Swetha Bongu ,  Kirthi Ravindra Kulkarni ,  Soujanya Venigalla

    IPC: G11C16/08 ,  G11C16/16 ,  G11C16/20 ,  G11C16/26

    Abstract: A data structure including two or more entries is maintained, where each entry corresponds to a range of consecutive wordlines in a block of a memory device. Each entry includes an operation counter to track a number of memory access operations performed on the range of consecutive wordlines in the block of the memory device. An indication of a memory access operation pertaining to the particular wordline is received. In response to the indication of the memory access operation pertaining to the particular wordline, a determination is made whether the particular wordline is within any range of consecutive wordlines that has a corresponding entry in the data structure. In response to the particular wordline being outside of any range of consecutive wordlines that has a corresponding entry in the data structure, a new entry for a new range of consecutive wordlines that includes the particular wordline is created.

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