- Patent Title: Memory devices with selector layer and methods of forming the same
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Application No.: US16885231Application Date: 2020-05-27
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Publication No.: US11342380B2Publication Date: 2022-05-24
- Inventor: Hung-Li Chiang , Jung-Piao Chiu , Tzu-Chiang Chen , Yu-Sheng Chen , Xinyu Bao
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L45/00
Abstract:
A memory device includes a memory cell, a selector layer and a first work function metal layer. The selector layer is disposed between a first electrode and a second electrode over the memory cell. The first work function metal layer is disposed between the selector layer and the first electrode.
Public/Granted literature
- US20210375989A1 MEMORY DEVICES AND METHODS OF FORMING THE SAME Public/Granted day:2021-12-02
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