Approaches for fabricating RRAM stacks with reduced forming voltage, and the resulting structures and devices, are described. In an example, a resistive random access memory (RRAM) device includes a conductive interconnect in an inter-layer dielectric (ILD) layer above a substrate. An RRAM element is on the conductive interconnect, the RRAM element including a first electrode layer on the uppermost surface of the conductive interconnect. A resistance switching layer is on the first electrode layer, the resistance switching layer including a first metal oxide material layer on the first electrode layer, and a second metal oxide material layer on the first metal oxide material layer, the second metal oxide material layer including a metal species not included in the first metal oxide material layer. An oxygen exchange layer is on the second metal oxide material layer of the resistance switching layer. A second electrode layer is on the oxygen exchange layer.