Invention Grant
- Patent Title: Storage device including nonvolatile memory device and operating method thereof
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Application No.: US16533901Application Date: 2019-08-07
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Publication No.: US11347654B2Publication Date: 2022-05-31
- Inventor: Heechul Chae
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2018-0141638 20181116
- Main IPC: G06F12/1009
- IPC: G06F12/1009 ; G06F12/02 ; G06F3/06 ; G06F9/54

Abstract:
A storage device includes a nonvolatile memory device and a memory controller. After writing first data at the first page, the memory controller writes second data at a second page. The memory controller generates first check data corresponding to the first data and second check data corresponding to the second data. The memory controller recovers the first and second physical addresses and the first and second logical addresses based on the second check data.
Public/Granted literature
- US20200159668A1 STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF Public/Granted day:2020-05-21
Information query
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