Invention Grant
- Patent Title: Method of deep learning-based examination of a semiconductor specimen and system thereof
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Application No.: US15675477Application Date: 2017-08-11
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Publication No.: US11348001B2Publication Date: 2022-05-31
- Inventor: Leonid Karlinsky , Boaz Cohen , Idan Kaizerman , Efrat Rosenman , Amit Batikoff , Daniel Ravid , Moshe Rosenweig
- Applicant: Applied Materials Israel Ltd.
- Applicant Address: IL Rehovot
- Assignee: Applied Materials Israel Ltd.
- Current Assignee: Applied Materials Israel Ltd.
- Current Assignee Address: IL Rehovot
- Agency: Lowenstein Sandler LLP
- Main IPC: G06N3/08
- IPC: G06N3/08 ; G06N3/04 ; G06K9/62 ; G06K9/46 ; G06K9/03

Abstract:
There are provided system and method of classifying defects in a semiconductor specimen. The method comprises: upon obtaining by a computer a Deep Neural Network (DNN) trained to provide classification-related attributes enabling minimal defect classification error, processing a fabrication process (FP) sample using the obtained trained DNN; and, resulting from the processing, obtaining by the computer classification-related attributes characterizing the at least one defect to be classified, thereby enabling automated classification, in accordance with the obtained classification-related attributes, of the at least one defect presented in the FP image. The DNN is trained using a classification training set comprising a plurality of first training samples and ground truth data associated therewith, each first training sample comprising a training image presenting at least one defect and the ground truth data is informative of classes and/or class distribution of defects presented in the respective first training samples; the FP sample comprises a FP image presenting at least one defect to be classified.
Public/Granted literature
- US20170364798A1 METHOD OF DEEP LEARNING-BASED EXAMINATION OF A SEMICONDUCTOR SPECIMEN AND SYSTEM THEREOF Public/Granted day:2017-12-21
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