Invention Grant
- Patent Title: Threshold switching selector based memory
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Application No.: US16326896Application Date: 2016-09-23
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Publication No.: US11348973B2Publication Date: 2022-05-31
- Inventor: Abhishek A. Sharma , Van H. Le , Gilbert Dewey , Rafael Rios , Jack T. Kavalieros , Shriram Shivaraman
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- International Application: PCT/US2016/053585 WO 20160923
- International Announcement: WO2018/057012 WO 20180329
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L45/00

Abstract:
Embodiments include a threshold switching selector. The threshold switching selector may include a threshold switching layer and a semiconductor layer between two electrodes. A memory cell may include the threshold switching selector coupled to a storage cell. The storage cell may be a PCRAM storage cell, a MRAM storage cell, or a RRAM storage cell. In addition, a RRAM device may include a RRAM storage cell, coupled to a threshold switching selector, where the threshold switching selector may include a threshold switching layer and a semiconductor layer, and the semiconductor layer of the threshold switching selector may be shared with the semiconductor layer of the RRAM storage cell.
Public/Granted literature
- US20210288108A1 THRESHOLD SWITCHING SELECTOR BASED MEMORY Public/Granted day:2021-09-16
Information query
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