Invention Grant
- Patent Title: Semiconductor device and semiconductor memory device
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Application No.: US17022328Application Date: 2020-09-16
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Publication No.: US11349033B2Publication Date: 2022-05-31
- Inventor: Tomoki Ishimaru , Shinji Mori , Kazuhiro Matsuo , Keiichi Sawa , Akifumi Gawase
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2020-052249 20200324
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/108 ; H01L29/267 ; H01L29/08 ; H01L29/417 ; H01L29/40
Abstract:
A semiconductor device of an embodiment includes a first electrode, a second electrode, a first metallic region provided between the first electrode and the second electrode and includes at least one metallic element selected from the group consisting of indium (In), gallium (Ga), zinc (Zn), aluminum (Al), magnesium (Mg), manganese (Mn), titanium (Ti), tungsten (W), molybdenum (Mo), and tin (Sn), a second metallic region provided between the first metallic region and the second electrode and includes the at least one metallic element, a semiconductor region provided between the first metallic region and the second metallic region and includes the at least one metallic element and oxygen (O), an insulating region provided between the first metallic region and the second metallic region and is surrounded by the semiconductor region, a gate electrode surrounding the semiconductor region, and a gate insulating layer provided between the semiconductor region and the gate electrode.
Public/Granted literature
- US20210305431A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2021-09-30
Information query
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