A variety of applications can include a memory device designed to perform sensing of a memory cell of a string of memory cells using a modified shielded bit line sensing operation. The modified shielded bit line sensing operation includes pre-charging a data line corresponding to the string with the string enabled to couple to the data line. The modified shielded bit line sensing operation can be implemented in a hybrid initialization routine for the memory device. The hybrid initialization routine can include a sensing read routine corresponding to an all data line configuration of data lines of the memory device and a modified sensing read routine corresponding to a shielded data line configuration of the data lines with selected strings enabled during pre-charging. A read retry routine associated with the modified sensing read routine can be added to the hybrid initialization routine. Additional devices, systems, and methods are discussed.